Influence ofp‐InP buffer layers on submicron InGaAs/InP junction field‐effect transistors

1988 ◽  
Vol 53 (25) ◽  
pp. 2513-2515 ◽  
Author(s):  
K. Steiner ◽  
U. Seiler ◽  
K. Heime ◽  
E. Kuphal
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Junction Field Effect Transistors

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

2020 ◽  
Vol 67 (10) ◽  
pp. 3972-3977 ◽  
Author(s):  
Chen Yang ◽  
Houqiang Fu ◽  
Viswanathan Naveen Kumar ◽  
Kai Fu ◽  
Hanxiao Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Junction Field Effect Transistors

Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology

2006 ◽  
Vol 53 (5) ◽  
pp. 3004-3012 ◽  
Author(s):  
G.-F. Dalla Betta ◽  
M. Boscardin ◽  
F. Fenotti ◽  
L. Pancheri ◽  
C. Piemonte ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Detector ◽  
Low Noise ◽  
Detector Technology ◽  
Junction Field Effect Transistors

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

Comparison of Mg and Zn gate implants for GaAs n-channel junction field effect transistors

1994 ◽  
Vol 23 (8) ◽  
pp. 809-818 ◽  
Author(s):  
M. E. Sherwin ◽  
J. C. Zolper ◽  
A. G. Baca ◽  
T. J. Drummond ◽  
R. J. Shul ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Junction Field Effect Transistors
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