Characteristics of Pt/Bi3.25La0.75Ti3O12/ZrO2/Si structures using ZrO2 as buffer layers for ferroelectric-gate field-effect transistors

2004 ◽  
Vol 22 (4) ◽  
pp. 1739-1742 ◽  
Author(s):  
Jung-Mi Lee ◽  
Kyoung-Tae Kim ◽  
Chang-Il Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

Influence ofp‐InP buffer layers on submicron InGaAs/InP junction field‐effect transistors

1988 ◽  
Vol 53 (25) ◽  
pp. 2513-2515 ◽  
Author(s):  
K. Steiner ◽  
U. Seiler ◽  
K. Heime ◽  
E. Kuphal
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Junction Field Effect Transistors

Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10386-10394 ◽  
Author(s):  
Md. Shafiqur Rahman ◽  
Susmita Ghose ◽  
Liang Hong ◽  
Pradip Dhungana ◽  
Abbas Fahami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Multiferroic Films

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

Low-Noise Bias Reliability of AlInAs/GaInAs Modulation-Doped Field Effect Transistors with Linearly Graded Low-Temperature Buffer Layers Grown on GaAs Substrates

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1186-1189 ◽  
Author(s):  
Arlene Wakita ◽  
Hans Rohdin ◽  
Virginia Robbins ◽  
Nick Moll ◽  
Chung-Yi Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Buffer Layers ◽  
Gaas Substrates
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