New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

Wen-chieh Shih; Fu-Chien Chiu; Huey-Liang Hwang

doi:10.1149/1.3372599

New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Meeting Abstracts ◽

10.1149/ma2010-01/18/1013 ◽

2010 ◽

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al∕La2O3∕Ta2O5∕SiO2∕Si structure for nonvolatile memory applications

Applied Physics Letters ◽

10.1063/1.2800821 ◽

2007 ◽

Vol 91 (19) ◽

pp. 192903 ◽

Cited By ~ 21

Author(s):

Chih-Hao Cheng ◽

Joseph Ya-Min Lee

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

High-k Gate Dielectrics for CMOS Technology ◽

10.1002/9783527646340.ch15 ◽

2012 ◽

pp. 471-499 ◽

Cited By ~ 6

Author(s):

Xubing Lu

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

High K ◽

Memory Applications

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

IEEE Electron Device Letters ◽

10.1109/led.2007.906797 ◽

2007 ◽

Vol 28 (11) ◽

pp. 964-966 ◽

Cited By ~ 11

Author(s):

Hsin-hao Hsu ◽

Ingram Yin-ku Chang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Memory Applications

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2

Micro and Nano Engineering ◽

10.1016/j.mne.2020.100046 ◽

2020 ◽

Vol 6 ◽

pp. 100046 ◽

Cited By ~ 2

Author(s):

Chi Sun ◽

Tingting Hao ◽

Junjie Li ◽

Haitao Ye ◽

Changzhi Gu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

And Performance

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High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) ◽

10.1109/icmts.2019.8730974 ◽

2019 ◽

Author(s):

Yasuo Koide

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Cited By ~ 1

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

Metal Gate ◽

High K ◽

Orientation Difference

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