Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Nasir Abdul Basit; Hong Koo Kim; Jean Blachere

doi:10.1063/1.122943

Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Applied Physics Letters ◽

10.1063/1.122943 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3941-3943 ◽

Cited By ~ 53

Author(s):

Nasir Abdul Basit ◽

Hong Koo Kim ◽

Jean Blachere

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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Ferroelectric-Modulated MoS2 Field-Effect Transistors as Multilevel Nonvolatile Memory

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c09951 ◽

2020 ◽

Vol 12 (40) ◽

pp. 44902-44911

Author(s):

Liping Xu ◽

Zhihua Duan ◽

Peng Zhang ◽

Xiang Wang ◽

Jinzhong Zhang ◽

...

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors

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(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

ECS Transactions ◽

10.1149/06601.0191ecst ◽

2015 ◽

Vol 66 (1) ◽

pp. 191-199 ◽

Cited By ~ 1

Author(s):

C.- F. Lo ◽

O. Laboutin ◽

C.- K. Kao ◽

K. O'Connor ◽

D. Hill ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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p-Type Tunneling Field-Effect Transistors on (100)- and (110)-Oriented Si Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.10pc01 ◽

2011 ◽

Vol 50 (10S) ◽

pp. 10PC01

Author(s):

Min Hung Lee ◽

Bin-Fong Hsieh ◽

Tong-Han Wu ◽

Shu Tong Chang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Si Substrates ◽

Tunneling Field Effect Transistors ◽

P Type

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AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

10.7567/ssdm.2008.g-1-2 ◽

2008 ◽

Author(s):

D. Visalli ◽

J. Derluyn ◽

S. Degroote ◽

M. Leys ◽

K. Cheng ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates ◽

High Breakdown Voltage ◽

Double Heterostructures

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Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2013.06.024 ◽

2013 ◽

Vol 540 ◽

pp. 183-189 ◽

Cited By ~ 4

Author(s):

Shu-Han Hsu ◽

Chun-Lin Chu ◽

Guang-Li Luo

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dry Etching ◽

Etching Process ◽

Si Substrates

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Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

Journal of Electronic Materials ◽

10.1007/s11664-013-2724-7 ◽

2013 ◽

Vol 42 (11) ◽

pp. 3275-3282 ◽

Cited By ~ 2

Author(s):

Ernesto Suarez ◽

Pik-Yiu Chan ◽

Murali Lingalugari ◽

John E. Ayers ◽

Evan Heller ◽

...

Keyword(s):

Quantum Dot ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator

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Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

Applied Physics Letters ◽

10.1063/1.3690670 ◽

2012 ◽

Vol 100 (9) ◽

pp. 093106 ◽

Cited By ~ 8

Author(s):

David J. Baek ◽

Myeong-Lok Seol ◽

Sung-Jin Choi ◽

Dong-Il Moon ◽

Yang-Kyu Choi

Keyword(s):

Graphene Oxide ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Storage ◽

Storage Node ◽

A Charge

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