Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

G. Van den bosch; G.V. Groeseneken; P. Heremans; H.E. Maes

doi:10.1109/16.119021

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.119021 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1820-1831 ◽

Cited By ~ 101

Author(s):

G. Van den bosch ◽

G.V. Groeseneken ◽

P. Heremans ◽

H.E. Maes

Keyword(s):

Interface Trap ◽

Mos Transistors ◽

Charge Pumping

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Adaptation of "Drain Current Charge Pumping Technique" for Interface Trap Characterization in Short Channel MOS Transistors

30th European Solid-State Device Research Conference ◽

10.1109/essderc.2000.194778 ◽

2000 ◽

Author(s):

W. Fikry ◽

M. Ragheb ◽

H. Haddara

Keyword(s):

Drain Current ◽

Interface Trap ◽

Mos Transistors ◽

Short Channel ◽

Charge Pumping

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Extraction of the Si-SiO/sub 2/ interface trap layer parameters in MOS transistors using a new charge pumping analysis

ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157) ◽

10.1109/icmts.1998.688069 ◽

2002 ◽

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Interface Trap ◽

Mos Transistors ◽

Charge Pumping

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Drain current charge pumping: a new technique for interface trap characterization in VLSI MOS transistors

Proceedings of the Sixteenth National Radio Science Conference. NRSC'99 (IEEE Cat. No.99EX249) ◽

10.1109/nrsc.1999.760933 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Haddara

Keyword(s):

Drain Current ◽

New Technique ◽

Interface Trap ◽

Mos Transistors ◽

Charge Pumping ◽

A New Technique

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ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884136 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-651-C4-655 ◽

Cited By ~ 2

Author(s):

R. BELLENS ◽

P. HEREMANS ◽

G. GROESENEKEN ◽

H. E. MAES

Keyword(s):

Mos Transistors ◽

Charge Pumping ◽

Hot Carrier ◽

Hot Carrier Degradation

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Surface potential determination in MOS transistors combining current-voltage and spectroscopic charge pumping

10.1049/ic:20010139 ◽

2001 ◽

Author(s):

M. Kahouadji

Keyword(s):

Surface Potential ◽

Mos Transistors ◽

Charge Pumping ◽

Current Voltage

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Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings ◽

10.1109/smicnd.1996.557308 ◽

2002 ◽

Author(s):

P. Igic ◽

A. Jaksic

Keyword(s):

Thermal Annealing ◽

Interface Trap ◽

Charge Pumping

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A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique

Solid-State Electronics ◽

10.1016/s0038-1101(01)00222-2 ◽

2001 ◽

Vol 45 (10) ◽

pp. 1717-1723 ◽

Cited By ~ 11

Author(s):

S Mahapatra ◽

V.R Rao ◽

J Vasi ◽

B Cheng ◽

J.C.S Woo

Keyword(s):

Interface Trap ◽

Asymmetric Channel ◽

Charge Pumping ◽

Hot Carrier

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Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)

IEEE Transactions on Nuclear Science ◽

10.1109/23.124085 ◽

1991 ◽

Vol 38 (6) ◽

pp. 1130-1139 ◽

Cited By ~ 25

Author(s):

N.S. Saks ◽

D.B. Brown ◽

R.W. Rendell

Keyword(s):

Interface Trap ◽

Gate Bias ◽

Mos Transistors ◽

Trap Formation ◽

Radiation Induced

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Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.485543 ◽

1996 ◽

Vol 43 (4) ◽

pp. 605-612 ◽

Cited By ~ 27

Author(s):

S. Okhonin ◽

T. Hessler ◽

M. Dutoit

Keyword(s):

Interface Trap ◽

Charge Pumping

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A high-sensitive digital photosensor using MOS interface-trap charge pumping

IEICE Electronics Express ◽

10.1587/elex.1.556 ◽

2004 ◽

Vol 1 (18) ◽

pp. 556-561

Author(s):

Akihiro Uehara ◽

Keiichiro Kagawa ◽

Takashi Tokuda ◽

Jun Ohta ◽

Masahiro Nunoshita

Keyword(s):

Interface Trap ◽

Trap Charge ◽

Charge Pumping

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