Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

2013 ◽  
Vol 113 (20) ◽  
pp. 204505 ◽  
Author(s):  
Christine M. Jackson ◽  
Aaron R. Arehart ◽  
Emre Cinkilic ◽  
Brian McSkimming ◽  
James S. Speck ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Deep Level ◽  
Atomic Layer ◽  
Interface Trap ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Layer Deposition

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

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