Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics

2019 ◽  
Vol 37 (4) ◽  
pp. 041203 ◽  
Author(s):  
Hogyoung Kim ◽  
Hee Ju Yun ◽  
Seok Choi ◽  
Byung Joon Choi
Keyword(s):  
Interface Trap ◽  
Gan Heterostructure

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

2008 ◽  
Vol 5 (6) ◽  
pp. 1892-1894 ◽  
Author(s):  
B. K. Li ◽  
K. J. Chen ◽  
K. M. Lau ◽  
W. K. Ge ◽  
J. N. Wang
Keyword(s):  
Persistent Photoconductivity ◽  
Deep Centers ◽  
Gan Heterostructure

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

2018 ◽  
Vol 112 (23) ◽  
pp. 233504 ◽  
Author(s):  
Xue-Feng Zheng ◽  
Shuai-Shuai Dong ◽  
Peng Ji ◽  
Chong Wang ◽  
Yun-Long He ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Interface States ◽  
Gan Heterostructure

Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

2018 ◽  
Vol 767 ◽  
pp. 600-605 ◽  
Author(s):  
Bing Ren ◽  
Masatomo Sumiya ◽  
Meiyong Liao ◽  
Yasuo Koide ◽  
Xinke Liu ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interface Trap ◽  
Mos Capacitors

Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer

2009 ◽  
Vol 45 (2) ◽  
pp. 54-59 ◽  
Author(s):  
M.L. Zhang ◽  
X.L. Wang ◽  
H.L. Xiao ◽  
C.M. Wang ◽  
C.B. Yang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Gan Heterostructure

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

1999 ◽  
Vol 592 ◽  
Author(s):  
J.L. Autran ◽  
P. Masson ◽  
G. Ghibaudo
Keyword(s):  
Time Domain ◽  
Electrical Characterization ◽  
Time Domain Analysis ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Behavior ◽  
Charge Pumping ◽  
Mos Devices ◽  
Technological Treatments

ABSTRACTThis work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.

Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

2005 ◽  
Vol 892 ◽  
Author(s):  
Motoaki Iwaya ◽  
Yoshizane Okadome ◽  
Yosuke Tsuchiya ◽  
Daisuke Iida ◽  
Aya Miura ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Molar Fraction ◽  
Biaxial Stress ◽  
Algan Layer ◽  
Biaxial Strain ◽  
X Ray Diffraction ◽  
Small Thickness ◽  
X Ray ◽  
Gan Heterostructure

AbstractThe anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress.

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