Optical and Electrical Characterization of GaAs-Based High-Speed and High-Sensitivity Delta-Doped Resonant Cavity-Enhanced HMSM Photodetector

2005 ◽  
Vol 52 (4) ◽  
pp. 454-464 ◽  
Author(s):  
X. Chen ◽  
B. Nabet ◽  
X. Zhao ◽  
H.-J. Huang ◽  
A. Cola ◽  
...  
Keyword(s):  
High Speed ◽  
Resonant Cavity ◽  
Electrical Characterization ◽  
High Sensitivity

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Nanoscale ◽  
2015 ◽  
Vol 7 (40) ◽  
pp. 16625-16630 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Zoila Jurado ◽  
Sadid Muneer ◽  
Mustafa Akbulut ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Electrical Characterization ◽  
Metastable Phases ◽  
Crystallization Dynamics

Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays

2011 ◽  
Vol 1337 ◽  
Author(s):  
Roland Rosezin ◽  
Eike Linn ◽  
Lutz Nielen ◽  
Carsten Kügeler ◽  
Rainer Bruchhaus ◽  
...  
Keyword(s):  
High Speed ◽  
Simple Procedure ◽  
Electrical Characterization ◽  
Building Blocks ◽  
Next Generation ◽  
High Uniformity ◽  
Non Volatile Memory ◽  
Speed Performance ◽  
Resistive Switches

ABSTRACTIn this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.

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