Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays

2011 ◽  
Vol 1337 ◽  
Author(s):  
Roland Rosezin ◽  
Eike Linn ◽  
Lutz Nielen ◽  
Carsten Kügeler ◽  
Rainer Bruchhaus ◽  
...  
Keyword(s):  
High Speed ◽  
Simple Procedure ◽  
Electrical Characterization ◽  
Building Blocks ◽  
Next Generation ◽  
High Uniformity ◽  
Non Volatile Memory ◽  
Speed Performance ◽  
Resistive Switches

ABSTRACTIn this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.

scholarly journals Recent Progress in the Synthesis and Characterization of Diarylethene-based MOFs

2014 ◽  
Vol 70 (a1) ◽  
pp. C1223-C1223
Author(s):  
Jason Benedict ◽  
Ian Walton ◽  
Dan Patel ◽  
Jordan Cox
Keyword(s):  
Chemical Properties ◽  
Building Blocks ◽  
Synthesis And Characterization ◽  
Next Generation ◽  
Design Synthesis ◽  
Thermally Induced ◽  
Potential Applications ◽  
External Stimuli ◽  
Physical And Chemical

Metal-organic Frameworks (MOFs) remain an extremely active area of research given the wide variety of potential applications and the enormous diversity of structures that can be created from their constituent building blocks. While MOFs are typically employed as passive materials, next-generation materials will exhibit structural and/or electronic changes in response to applied external stimuli including light, charge, and pH. Herein we present recent results in which advanced photochromic diarylethenes are combined with MOFs through covalent and non-covalent methods to create photo-responsive permanently porous crystalline materials. This presentation will describe the design, synthesis, and characterization of next-generation photo-switchable diarylethene based ligands which are subsequently used to photo-responsive MOFs. These UBMOF crystals are, by design, isostructural with previously reported non-photoresponsive frameworks which enables a systematic comparison of their physical and chemical properties. While the photoswitching of the isolated ligand in solution is fully reversible, the cycloreversion reaction is suppressed in the UBMOF single crystalline phase. Spectroscopic evidence for thermally induced cycloreversion will be presented, as well as a detailed analysis addressing the limits of X-ray diffraction techniques applied to these systems.

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Nanoscale ◽  
2015 ◽  
Vol 7 (40) ◽  
pp. 16625-16630 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Zoila Jurado ◽  
Sadid Muneer ◽  
Mustafa Akbulut ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Electrical Characterization ◽  
Metastable Phases ◽  
Crystallization Dynamics

scholarly journals Design and Characterization of the Next Generation Nanowire Amplifiers

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-5
Author(s):  
Sotoudeh Hamedi-Hagh ◽  
Ahmet Bindal
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Next Generation ◽  
Short Channel ◽  
Surrounding Gate ◽  
Channel Effects ◽  
Gate Control ◽  
Voltage Swing

Vertical nanowire surrounding gate field effect transistors (SGFETs) provide full gate control over the channel to eliminate short-channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10 nm channel length and a 2 nm channel radius. The amplifier dissipates 5 μW power and provides 5 THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5 V, and a distortion better than 3% from a 1.8 V power supply and a 20 aF capacitive load. The 2nd- and 3rd-order harmonic distortions of the amplifier are −40 dBm and −52 dBm, respectively, and the 3rd-order intermodulation is −24 dBm for a two-tone input signal with 10 mV amplitude and 10 GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high-speed analog and VLSI technologies.

A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

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