Experimental electrical characterization of interconnects and discontinuities in high-speed digital systems

1991 ◽  
Vol 14 (4) ◽  
pp. 761-765 ◽  
Author(s):  
S.B. Goldberg ◽  
M.B. Steer ◽  
P.D. Franzon ◽  
J.S. Kasten
Nanoscale ◽  
2015 ◽  
Vol 7 (40) ◽  
pp. 16625-16630 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Zoila Jurado ◽  
Sadid Muneer ◽  
Mustafa Akbulut ◽  
...  

2011 ◽  
Vol 1337 ◽  
Author(s):  
Roland Rosezin ◽  
Eike Linn ◽  
Lutz Nielen ◽  
Carsten Kügeler ◽  
Rainer Bruchhaus ◽  
...  

ABSTRACTIn this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.


Sign in / Sign up

Export Citation Format

Share Document