Back-Gate Controlled Wide Tunable Range Diode Voltage in Asymmetrical Double-Gate Devices

2006 IEEE international SOI Conferencee Proceedings ◽

10.1109/soi.2006.284481 ◽

2006 ◽

Author(s):

Keunwoo Kim ◽

Ching-te Chuang ◽

Jente Kuang ◽

Hung Ngo ◽

Kevin Nowka

Keyword(s):

Double Gate ◽

Back Gate ◽

Tunable Range ◽

Diode Voltage

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Low-Power High-Performance Asymmetrical Double-Gate Circuits Using Back-Gate-Controlled Wide-Tunable-Range Diode Voltage

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.902693 ◽

2007 ◽

Vol 54 (9) ◽

pp. 2263-2268 ◽

Cited By ~ 3

Author(s):

Keunwoo Kim ◽

Ching-Te Chuang ◽

J.B. Kuang ◽

H.C. Ngo ◽

K.J. Nowka

Keyword(s):

Low Power ◽

High Performance ◽

Double Gate ◽

Back Gate ◽

Tunable Range ◽

Diode Voltage

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Extremely-scaled double-gate CMOS with non-self-aligned back gate

IEEE VLSI-TSA International Symposium on VLSI Technology 2005 (VLSI-TSA-Tech) VTSA-05 ◽

10.1109/vtsa.2005.1497100 ◽

2005 ◽

Author(s):

Keunwoo Kim ◽

H.I. Hanafi ◽

J. Cai ◽

Ching-Te Chuang

Keyword(s):

Double Gate ◽

Back Gate

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Study of Extended Back Gate Double Gate JunctionLess Transistor: Theoretical and Numerical Investigation

Springer Proceedings in Physics - The Physics of Semiconductor Devices ◽

10.1007/978-3-319-97604-4_98 ◽

2019 ◽

pp. 633-642

Author(s):

Vandana Kumari ◽

Abhineet Sharan ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Numerical Investigation ◽

Double Gate ◽

Back Gate ◽

Junctionless Transistor

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Circuit design of reconfigurable dynamic logic based on double gate CNTFETs focusing on number of states of back gate voltages

Contemporary Engineering Sciences ◽

10.12988/ces.2014.3952 ◽

2014 ◽

Vol 7 ◽

pp. 39-52 ◽

Cited By ~ 1

Author(s):

Junki Kato ◽

Shigeyoshi Watanabe ◽

Hiroshi Ninomiya ◽

Manabu Kobayashi ◽

Yasuyuki Miura

Keyword(s):

Circuit Design ◽

Dynamic Logic ◽

Double Gate ◽

Back Gate

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How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?

Solid-State Electronics ◽

10.1016/j.sse.2008.06.051 ◽

2008 ◽

Vol 52 (12) ◽

pp. 1895-1903 ◽

Cited By ~ 7

Author(s):

Abhinav Kranti ◽

G. Alastair Armstrong

Keyword(s):

Low Voltage ◽

Double Gate ◽

Back Gate ◽

Rf Applications

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Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6508 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6508-6509 ◽

Cited By ~ 16

Author(s):

M. Jagadesh Kumar ◽

G. Venkateshwar Reddy

Keyword(s):

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Step Potential ◽

Back Gate ◽

Channel Effects

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DC and AC performance analysis of 25 nm symmetric/asymmetric double-gate, back-gate and bulk CMOS

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871229 ◽

2002 ◽

Cited By ~ 10

Author(s):

MeiKei Ieong ◽

H.-S.P. Wong ◽

Yuan Taur ◽

P. Oldiges ◽

D. Frank

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Back Gate

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Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2013.6545646 ◽

2013 ◽

Cited By ~ 3

Author(s):

W. Mizubayashi ◽

K. Fukuda ◽

T. Mori ◽

K. Endo ◽

Y. X. Liu ◽

...

Keyword(s):

Threshold Voltage ◽

Gate Dielectrics ◽

Double Gate ◽

Back Gate

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Super-self-aligned back-gate∕double-gate planar transistors: Novel fabrication approach

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2397067 ◽

2006 ◽

Vol 24 (6) ◽

pp. 3230 ◽

Cited By ~ 2

Author(s):

Hao Lin ◽

Haitao Liu ◽

Arvind Kumar ◽

Uygar Avci ◽

Jay S. Van Delden ◽

...

Keyword(s):

Double Gate ◽

Back Gate

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Analytical modeling of Double Gate MOSFET using back gate insulator thickness variation

2009 2nd International Workshop on Electron Devices and Semiconductor Technology ◽

10.1109/edst.2009.5166119 ◽

2009 ◽

Author(s):

S. K. Vishvakarma ◽

A. K. Saxena ◽

S. Dasgupta ◽

Tor. A. Fjeldly

Keyword(s):

Analytical Modeling ◽

Gate Insulator ◽

Thickness Variation ◽

Double Gate ◽

Back Gate ◽

Double Gate Mosfet

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