2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780362799

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871232 ◽

2002 ◽

Author(s):

S. Aronowitz ◽

H. Puchner ◽

V. Zubcov

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Application of an algebraic multigrid solver to process simulation problems

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871249 ◽

2002 ◽

Author(s):

T. Fullenbach ◽

K. Stuben ◽

S. Mijalkovic

Keyword(s):

Process Simulation ◽

Algebraic Multigrid ◽

Multigrid Solver

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Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871214 ◽

2002 ◽

Cited By ~ 9

Author(s):

F. Charlet ◽

C. Bermond ◽

S. Putot ◽

G. Le Carval ◽

B. Flechet

Keyword(s):

Transmission Lines ◽

Numerical Tools

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Modeling of initial stages of annealing for amorphizing arsenic implants

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871235 ◽

2002 ◽

Cited By ~ 2

Author(s):

P. Fastenko ◽

S.T. Dunham ◽

B. Murphy

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Characteristics of silicon nano-scale devices

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871237 ◽

2002 ◽

Author(s):

T. Hiramoto ◽

H. Majima

Keyword(s):

Nano Scale

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Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871222 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Hane ◽

T. Ikezawa ◽

G.H. Gilmer

Keyword(s):

Molecular Dynamics ◽

Tight Binding ◽

Migration Path ◽

And Migration

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A fast three-dimensional MC simulator for tunneling diodes

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871199 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Wagner ◽

H. Mizuta ◽

K. Nakazato

Keyword(s):

Three Dimensional ◽

Tunneling Diodes

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Optimizing free carrier absorption measurements for power devices by physically rigorous simulation

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871255 ◽

2002 ◽

Cited By ~ 1

Author(s):

R. Thalhammer ◽

F. Hille ◽

G. Wachutka

Keyword(s):

Free Carrier ◽

Free Carrier Absorption ◽

Power Devices ◽

Carrier Absorption ◽

Absorption Measurements

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Simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871244 ◽

2002 ◽

Author(s):

K. Rajendran ◽

W. Schoenmaker ◽

S. Decoutere ◽

M. Caymax

Keyword(s):

Epitaxial Layers ◽

Boron Diffusion ◽

Strained Si

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MOSFET modeling into the ballistic regime

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871197 ◽

2002 ◽

Cited By ~ 70

Author(s):

J.D. Bude

Keyword(s):

Ballistic Regime

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices

Application of an algebraic multigrid solver to process simulation problems

Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

Modeling of initial stages of annealing for amorphizing arsenic implants

Characteristics of silicon nano-scale devices

Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics

A fast three-dimensional MC simulator for tunneling diodes

Optimizing free carrier absorption measurements for power devices by physically rigorous simulation

Simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

MOSFET modeling into the ballistic regime

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
Latest Publications