Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics

7th International Symposium on Plasma- and Process-Induced Damage ◽

10.1109/ppid.2002.1042630 ◽

2003 ◽

Author(s):

Shyue-Seng Tan ◽

Tupei Chen ◽

Chow-Hoe Ang ◽

C. Lek ◽

Werthe Lin ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Thin Plasma

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering ◽

10.1016/j.mee.2005.04.054 ◽

2005 ◽

Vol 80 ◽

pp. 122-125 ◽

Cited By ~ 36

Author(s):

B. Kaczer ◽

V. Arkhipov ◽

M. Jurczak ◽

G. Groeseneken

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2011.2157300 ◽

2011 ◽

Vol 32 (8) ◽

pp. 1017-1019

Author(s):

Jer-Chyi Wang ◽

Hsing-Kan Peng ◽

Chao-Sung Lai ◽

Pai-Chi Chou ◽

Min-Jer Lee

Keyword(s):

Ion Implantation ◽

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197743 ◽

2003 ◽

Cited By ~ 42

Author(s):

S. Tsujikawa ◽

T. Mine ◽

K. Watanabe ◽

Y. Shimamoto ◽

R. Tsuchiya ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability of Rf-sputtered Mg0.05Zn0.95O thin film transistors with MgO gate dielectrics

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/10/105007 ◽

2011 ◽

Vol 26 (10) ◽

pp. 105007 ◽

Cited By ~ 13

Author(s):

Chih-Hung Li ◽

Yi-Shiuan Tsai ◽

Jian Z Chen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2013.10.001 ◽

2014 ◽

Vol 91 ◽

pp. 127-129

Author(s):

Hyojune Kim ◽

Yonghan Roh

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Body Bias

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Experimental and theoretical studies of negative bias temperature instability in ultra-thin gate dielectrics

10.32657/10356/3384 ◽

2005 ◽

Author(s):

Shyue Seng Tan

Keyword(s):

Gate Dielectrics ◽

Theoretical Studies ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Experimental And Theoretical Studies

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Effect of Gate Oxide Thickness on Negative Bias Temperature Instability in p-Mosfet with Sion Gate Dielectrics

ECS Meeting Abstracts ◽

10.1149/ma2016-01/16/1020 ◽

2016 ◽

Keyword(s):

Gate Dielectrics ◽

Gate Oxide ◽

Oxide Thickness ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Gate Oxide Thickness

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Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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