Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Shiyang Zhu; Anri Nakajima; Takuo Ohashi; Hideharu Miyake

doi:10.1063/1.2183409

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Journal of Electronic Materials ◽

10.1007/s11664-014-2978-8 ◽

2014 ◽

Vol 43 (4) ◽

pp. 1207-1213 ◽

Cited By ~ 3

Author(s):

H. Hussin ◽

N. Soin ◽

M.F. Bukhori ◽

Y. Abdul Wahab ◽

S. Shahabuddin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Simulation Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2011 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2011-2014 ◽

Cited By ~ 2

Author(s):

Jone F. Chen ◽

Dao-Hong Yang ◽

Chih-Yung Lin ◽

Shien-Yang Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Supply Voltage ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2Stack Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1874 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1874-1878 ◽

Cited By ~ 1

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc25 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC25

Author(s):

Yandong He ◽

Gang Du ◽

Yunxiang Yang ◽

Ganggang Zhang ◽

Xing Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Forward Body Bias

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Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2745649 ◽

2007 ◽

Vol 90 (23) ◽

pp. 233505

Author(s):

Shih-Chang Chen ◽

Chao-Hsin Chien ◽

Jen-Chung Lou

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Gate Stack ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4773479 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012103 ◽

Cited By ~ 11

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.3541879 ◽

2011 ◽

Vol 98 (6) ◽

pp. 063504 ◽

Cited By ~ 8

Author(s):

Changhwan Choi ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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