High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

2015 ◽  
Vol 36 (8) ◽  
pp. 754-756 ◽  
Author(s):  
Sen Huang ◽  
Xinyu Liu ◽  
Jinhan Zhang ◽  
Ke Wei ◽  
Guoguo Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Rf Performance ◽  
Gate Recess

Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

2005 ◽  
Vol 26 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Wen-Kai Wang ◽  
Po-Chen Lin ◽  
Ching-Huao Lin ◽  
Cheng-Kuo Lin ◽  
Yi-Jen Chan ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Gan Hemt ◽  
Cap Layer ◽  
Gate Recess

Performance enhancement of high temperature SnO2-based planar perovskite solar cells: electrical characterization and understanding of the mechanism

2016 ◽  
Vol 4 (21) ◽  
pp. 8374-8383 ◽  
Author(s):  
Liangbin Xiong ◽  
Minchao Qin ◽  
Guang Yang ◽  
Yaxiong Guo ◽  
Hongwei Lei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Steady State ◽  
High Temperature ◽  
Performance Enhancement ◽  
Perovskite Solar Cells ◽  
Electrical Characterization ◽  
Mg Doping ◽  
Interfacial Contact

Mg doping improves interfacial contact and endows low hysteresis high temperature processed SnO2-based PSCs with a steady-state PCE of 14.55%.

Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- $k$ Spacer for Low Power Applications

2013 ◽  
Vol 60 (1) ◽  
pp. 63-69 ◽  
Author(s):  
Kalyan Koley ◽  
Arka Dutta ◽  
Binit Syamal ◽  
Samar K. Saha ◽  
Chandan Kumar Sarkar
Keyword(s):  
Low Power ◽  
Performance Enhancement ◽  
High K ◽  
Rf Performance
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