source contact Latest Research Papers

On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

10.1109/eurosoi-ulis53016.2021.9560186 ◽

2021 ◽

Author(s):

Eddy Simoen ◽

Anabela Veloso ◽

Philippe Matagne

Keyword(s):

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Characteristics ◽

The Asymmetry ◽

Source Contact

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Encapsulated Gamma Source Contact Dose Conversion Factors: Updating NCRP-40 Guidance

Health Physics ◽

10.1097/hp.0000000000001291 ◽

2021 ◽

Vol 120 (2) ◽

pp. 131-144

Author(s):

Edward Waller ◽

Eric Heritage

Keyword(s):

Gamma Source ◽

Conversion Factors ◽

Source Contact

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High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3031876 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5434-5440

Author(s):

Yi-Ping Huang ◽

Chih-Chieh Huang ◽

Ching-Sung Lee ◽

Wei-Chou Hsu

Keyword(s):

Work Function ◽

High Performance ◽

Metal Source ◽

Source Contact

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Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2020.2981251 ◽

2020 ◽

Vol 8 ◽

pp. 662-667

Author(s):

Johan Saltin ◽

Nguyen Cong Dao ◽

Philip H. W. Leong ◽

Hiu Yung Wong

Keyword(s):

Energy Filtering ◽

Filtering Effect ◽

Source Contact

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Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Pramana ◽

10.1007/s12043-019-1866-4 ◽

2019 ◽

Vol 94 (1) ◽

Author(s):

Rachita Mohapatra ◽

Pradipta Dutta

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Contact Length ◽

Length Ratio ◽

High Electron ◽

High Electron Mobility ◽

Double Channel ◽

Source Contact

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Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon

Chinese Journal of Physics ◽

10.1016/j.cjph.2019.09.026 ◽

2019 ◽

Vol 62 ◽

pp. 258-273 ◽

Cited By ~ 2

Author(s):

Kien Liong Wong ◽

Beng Rui Tan ◽

Mu Wen Chuan ◽

Afiq Hamzah ◽

Shahrizal Rusli ◽

...

Keyword(s):

Graphene Nanoribbon ◽

Lightly Doped Drain ◽

Source Contact

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Degradation of Sub-Threshold Slope in Ultra-Scaled MOSFETs due to Energy Filtering at Source Contact

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320746 ◽

2019 ◽

Author(s):

J. Saltin ◽

N. C. Dao ◽

P. H. W. Leong ◽

H. Y. Wong

Keyword(s):

Energy Filtering ◽

Source Contact

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The limits of multiple-source contact influence

Linguistik Aktuell/Linguistics Today - Language Contact, Continuity and Change in the Genesis of Modern Hebrew ◽

10.1075/la.256.02tau ◽

2019 ◽

pp. 33-54

Author(s):

Moshe Taube

Keyword(s):

Multiple Source ◽

Source Contact

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Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734545 ◽

2018 ◽

Author(s):

Ling Yang ◽

Bin Hou ◽

Meng Zhang ◽

Qing Zhu ◽

Jiejie Zhu ◽

...

Keyword(s):

Gan Hemts ◽

Source Contact

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High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment

IEEE Electron Device Letters ◽

10.1109/led.2018.2864135 ◽

2018 ◽

pp. 1-1 ◽

Cited By ~ 5

Author(s):

Ling Yang ◽

Bin Hou ◽

Minhan Mi ◽

Qing Zhu ◽

Mei Wu ◽

...

Keyword(s):

Electron Mobility ◽

High Performance ◽

Performance Enhancement ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Source Contact

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source contact
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

Encapsulated Gamma Source Contact Dose Conversion Factors: Updating NCRP-40 Guidance

High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge

Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs

Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon

Degradation of Sub-Threshold Slope in Ultra-Scaled MOSFETs due to Energy Filtering at Source Contact

The limits of multiple-source contact influence

Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology

High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment

Export Citation Format

source contactRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

Encapsulated Gamma Source Contact Dose Conversion Factors: Updating NCRP-40 Guidance

High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge

Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs

Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon

Degradation of Sub-Threshold Slope in Ultra-Scaled MOSFETs due to Energy Filtering at Source Contact

The limits of multiple-source contact influence

Enhanced DC and RF characteristics in E/D-mode AlGaN/GaN HEMTs by TiN-based source contact technology

High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment

source contact
Recently Published Documents