Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

2005 ◽  
Vol 26 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Wen-Kai Wang ◽  
Po-Chen Lin ◽  
Ching-Huao Lin ◽  
Cheng-Kuo Lin ◽  
Yi-Jen Chan ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Gan Hemt ◽  
Cap Layer ◽  
Gate Recess

Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness

2020 ◽  
Vol 19 (06) ◽  
pp. 2050011
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Performance Enhancement ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Barrier Layer Thickness ◽  
Gan Hemt ◽  
Transfer Characteristics ◽  
Strong Inversion ◽  
Present Design ◽  
Device Geometry ◽  
Dimensional Electron Gas

The two-dimensional electron gas (2DEG) at the heterointerface of AlGaN and GaN is a complicated transcendental function of gate voltage, so an analytical charge control model for AlGaN/GaN high electron mobility transistor (HEMT) is presented accounting for all the three regions of operation (i.e., sub-threshold, moderate, and strong-inversion region). In addition to it, the performance of AlGaN/GaN HEMT is highly dependent on the device geometry. Therefore, to get the optimum performance of the device it is advisable to optimize the parameters governing the device geometry. Accordingly, the output and transfer characteristics, threshold voltage, ON current, OFF current, and transconductance are calculated using numerical computations. The present design is tested to calculate the voltage transfer characteristics (VTC) and transient characteristics of the invertor circuit, after the optimization of the device parameters.

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

2020 ◽  
Vol 20 (16) ◽  
pp. 8947-8955
Author(s):  
Robert Sokolovskij ◽  
Jian Zhang ◽  
Hongze Zheng ◽  
Wenmao Li ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Gate Recess ◽  
The Impact

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

A high-performance enhancement-mode AlGaN/GaN HEMT

2010 ◽  
Vol 31 (8) ◽  
pp. 084001 ◽  
Author(s):  
Feng Zhihong ◽  
Xie Shengyin ◽  
Zhou Rui ◽  
Yin Jiayun ◽  
Zhou Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Gan Hemt

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

2015 ◽  
Vol 36 (8) ◽  
pp. 754-756 ◽  
Author(s):  
Sen Huang ◽  
Xinyu Liu ◽  
Jinhan Zhang ◽  
Ke Wei ◽  
Guoguo Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Rf Performance ◽  
Gate Recess

Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer

2018 ◽  
Vol 18 (11) ◽  
pp. 7400-7404
Author(s):  
Lin-Cheng Wei ◽  
Quan Wang ◽  
Chun Feng ◽  
Hong-Ling Xiao ◽  
Li-Juan Jiang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Cap Layer
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