Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs

2011 ◽  
Author(s):  
S. Martin-Horcajo ◽  
M. J. Tadjer ◽  
M. F. Romero ◽  
R. Cuerdo ◽  
F. Calle
Keyword(s):  
High Temperature ◽  
Enhancement Mode ◽  
Fabrication And Characterization

scholarly journals Fabrication of Superconducting Nanowires Using the Template Method

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1970
Author(s):  
Michael Rudolf Koblischka ◽  
Anjela Koblischka-Veneva
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Sol Gel ◽  
Template Method ◽  
Aao Template ◽  
Superconducting Nanowires ◽  
Research Directions ◽  
Templating Method ◽  
Fabrication And Characterization

The fabrication and characterization of superconducting nanowires fabricated by the anodic aluminium oxide (AAO) template technique has been reviewed. This templating method was applied to conventional metallic superconductors, as well as to several high-temperature superconductors (HTSc). For filling the templates with superconducting material, several different techniques have been applied in the literature, including electrodeposition, sol-gel techniques, sputtering, and melting. Here, we discuss the various superconducting materials employed and the results obtained. The arising problems in the fabrication process and the difficulties concerning the separation of the nanowires from the templates are pointed out in detail. Furthermore, we compare HTSc nanowires prepared by AAO templating and electrospinning with each other, and give an outlook to further research directions.

scholarly journals Fabrication and characterization of silicon oxycarbide fibre-mats via electrospinning for high temperature applications

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38446-38455
Author(s):  
Zhongkan Ren ◽  
Christel Gervais ◽  
Gurpreet Singh
Keyword(s):  
High Temperature ◽  
Silicon Oxycarbide ◽  
Fabrication And Characterization ◽  
Temperature Applications

Electrospinning of ceramic mats for high temperature applications.

Fabrication and characterization of a novel high-temperature vacuum insulation composites with SiC nanowire core material

2019 ◽  
Vol 6 (9) ◽  
pp. 095622
Author(s):  
Binbin Li ◽  
Xiaosen Yuan ◽  
Jiahao Liao ◽  
Bangxiao Mao ◽  
Haiquan Huang ◽  
...  
Keyword(s):  
High Temperature ◽  
Core Material ◽  
Vacuum Insulation ◽  
Fabrication And Characterization

scholarly journals Design, fabrication and characterization of microreactors for high temperature syntheses

2012 ◽  
Vol 211-212 ◽  
pp. 432-441 ◽  
Author(s):  
Cynthia S. Martínez-Cisneros ◽  
Sara Gómez-de Pedro ◽  
Mar Puyol ◽  
Joan García-García ◽  
Julián Alonso-Chamarro
Keyword(s):  
High Temperature ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of High Temperature Resin/Carbon Nanofiber Composites

2006 ◽  
Vol 18 (4) ◽  
pp. 527-544 ◽  
Author(s):  
Sayata Ghose ◽  
Kent A. Watson ◽  
Dennis C. Working ◽  
Emilie J. Siochi ◽  
John W. Connell ◽  
...  
Keyword(s):  
High Temperature ◽  
Carbon Nanofiber ◽  
Fabrication And Characterization

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

2009 ◽  
Vol 1202 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yuki Niiyama ◽  
Takehiko Nomura ◽  
Masayuki Iwami ◽  
yoshihiro Satoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Silicon Substrates ◽  
Enhancement Mode ◽  
Threshold Voltages ◽  
Source Voltage ◽  
Gan Hfet ◽  
Output Characteristics ◽  
High Temperature Operation ◽  
State Resistance

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

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