Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement
2019 ◽
Vol 32
(6)
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Keyword(s):
2018 ◽
Vol 39
(5)
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pp. 054001
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Keyword(s):
2017 ◽
Vol 25
(2)
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pp. 199-230
2018 ◽
Vol 15
(3)
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pp. 80-85
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