Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

2011 ◽  
Vol 32 (4) ◽  
pp. 569-571 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Byoungchan Oh ◽  
Seunghyun Jang ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Tunneling Current ◽  
Random Telegraph Noise ◽  
Direct Tunneling ◽  
High K ◽  
Telegraph Noise ◽  
Direct Tunneling Current ◽  
Gate Edge ◽  
High K Gate Dielectric

An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] Interfaces

2011 ◽  
Author(s):  
Muhammad F. Sahdan ◽  
Panji Achmari ◽  
Fatimah A. Noor ◽  
Ferry Iskandar ◽  
Mikrajuddin Abdullah ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Mos Capacitor ◽  
Direct Tunneling ◽  
High K ◽  
Direct Tunneling Current

The Study of Direct Tunneling Current in Strained MOS Device with Silicon Nitride Stack Gate Dielectric

2011 ◽  
Vol 110-116 ◽  
pp. 5442-5446
Author(s):  
Li Jun Xu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Bo Xu ◽  
Jian Li Ma
Keyword(s):  
Dielectric Constant ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Device Simulation ◽  
Tunneling Current ◽  
Simulation Software ◽  
Direct Tunneling ◽  
Direct Tunneling Current ◽  
Application Limit ◽  
Mos Device

As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon nitride as gate dielectric can solve this problem effectively in some time due to the dielectric constant of silicon nitride is larger than silica’s.This paper derived the dielectric constant of silicon nitride stack gate dielectric,and simulated the direct tunneling current of strained MOS device with silica and silicon nitride gate dielectric through device simulation software ISE TCAD10.0,studied the direct tunneling current of strained MOS device with silicon nitride stack gate dielectric change with the variation of some parameters and the application limit of silicon nitride material.

Modeling of direct tunneling current through gate dielectric stacks

2000 ◽  
Vol 47 (10) ◽  
pp. 1851-1857 ◽  
Author(s):  
S. Mudanai ◽  
Yang-Yu Fan ◽  
Qiqing Ouyang ◽  
A.F. Tasch ◽  
S.K. Banerjee
Keyword(s):  
Gate Dielectric ◽  
Tunneling Current ◽  
Direct Tunneling ◽  
Direct Tunneling Current
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