International Semiconductor Device Research Symposium, 2003
Latest Publications

TOTAL DOCUMENTS

242

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780381394

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272029 ◽

2004 ◽

Author(s):

M. Hasanuzzarnan ◽

S.K. Islam ◽

L.M. Tolbert ◽

M.T. Alam

Keyword(s):

Silicon Carbide ◽

Temperature Dependency

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Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devices

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272083 ◽

2004 ◽

Author(s):

S.J. Wrazien ◽

Yu Wang ◽

B.M. Khan ◽

M.H. White

Keyword(s):

Memory Devices ◽

Semiconductor Memory

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Development of ohmic contact materials for wide gap p-type 4H-SiC

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272120 ◽

2004 ◽

Author(s):

S. Tsukimoto ◽

O. Nakatsuka ◽

M. Moriyama ◽

M. Murakami

Keyword(s):

Ohmic Contact ◽

Contact Materials ◽

Wide Gap ◽

P Type

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Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272235 ◽

2004 ◽

Author(s):

G.B. Tait ◽

D.B. Ameen

Keyword(s):

Quantum Well ◽

Quantum Well Intermixing

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Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272047 ◽

2004 ◽

Author(s):

Lei Ai ◽

M.-C. Cheng

Keyword(s):

Cutoff Frequency

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Design and fabrication of Schottky diode, on-chip RF power defector

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272103 ◽

2004 ◽

Author(s):

Woochul Jeon ◽

J. Rodgers ◽

J. MeIngailis

Keyword(s):

Schottky Diode ◽

Rf Power ◽

On Chip

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Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1271981 ◽

2004 ◽

Cited By ~ 1

Author(s):

S. Van Elshocht ◽

B. Brijs ◽

M. Caymax ◽

T. Conard ◽

S. De Gendt ◽

...

Keyword(s):

Physical Characterization

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A new wideband modeling technique for deep sub-micron MOSFET's

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272033 ◽

2004 ◽

Author(s):

Ming Hsiang Chiou ◽

K.Y.I. Hsu

Keyword(s):

Modeling Technique

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Analytical threshold voltage model for design and evaluation of tri-gate MOSFETs

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272075 ◽

2004 ◽

Cited By ~ 1

Author(s):

C. Zeng ◽

D.W. Barlage

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Model

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Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272156 ◽

2004 ◽

Cited By ~ 1

Author(s):

H.-M. Wu ◽

J.-V. Lin ◽

L.-H. Peng ◽

C.-M. Lee ◽

J.-I. Chyi ◽

...

Keyword(s):

Interfacial Properties ◽

Wet Oxidation ◽

Annealing Effects

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International Semiconductor Device Research Symposium, 2003Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devices

Development of ohmic contact materials for wide gap p-type 4H-SiC

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs

Design and fabrication of Schottky diode, on-chip RF power defector

Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD

A new wideband modeling technique for deep sub-micron MOSFET's

Analytical threshold voltage model for design and evaluation of tri-gate MOSFETs

Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

International Semiconductor Device Research Symposium, 2003
Latest Publications