Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-$k$ MOSFETs

Ju-Wan Lee; Byoung Hun Lee; Hyungcheol Shin; Jong-Ho Lee

doi:10.1109/ted.2010.2041871

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-$k$ MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2041871 ◽

2010 ◽

Vol 57 (4) ◽

pp. 913-918 ◽

Cited By ~ 19

Author(s):

Ju-Wan Lee ◽

Byoung Hun Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Random Telegraph Noise ◽

Direct Tunneling ◽

High K ◽

Telegraph Noise ◽

Tunneling Currents ◽

Gate Edge

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Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

IEEE Electron Device Letters ◽

10.1109/led.2011.2106108 ◽

2011 ◽

Vol 32 (4) ◽

pp. 569-571 ◽

Cited By ~ 11

Author(s):

Heung-Jae Cho ◽

Younghwan Son ◽

Byoungchan Oh ◽

Seunghyun Jang ◽

Jong-Ho Lee ◽

...

Keyword(s):

Gate Dielectric ◽

Tunneling Current ◽

Random Telegraph Noise ◽

Direct Tunneling ◽

High K ◽

Telegraph Noise ◽

Direct Tunneling Current ◽

Gate Edge ◽

High K Gate Dielectric

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Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

Applied Physics Letters ◽

10.1063/1.3543901 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023505 ◽

Cited By ~ 2

Author(s):

Ju-Wan Lee ◽

Chan Hyeong Park ◽

Hyungcheol Shin ◽

Byung-Gook Park ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Edge Current ◽

High K ◽

Telegraph Noise ◽

Gate Edge

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Three-dimensional device simulation of random telegraph noise spectroscopy with Coulomb energy variation of the trap in high-k gate oxide

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.124301 ◽

2018 ◽

Vol 57 (12) ◽

pp. 124301

Author(s):

Po-Jui Lin ◽

Chong-Zih Su ◽

Chih-Wei Yao ◽

Hiroshi Watanabe

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Gate Oxide ◽

Coulomb Energy ◽

Random Telegraph Noise ◽

Energy Variation ◽

Noise Spectroscopy ◽

High K ◽

Telegraph Noise

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Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2128 ◽

2018 ◽

Vol 13 (4) ◽

pp. 454-457

Author(s):

Tsung-Hsien Kao ◽

Sheng-Po Chang ◽

Shoou-Jinn Chang

Keyword(s):

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

10.7567/ssdm.2010.p-3-14 ◽

2010 ◽

Author(s):

W. K. Yeh ◽

C. W. Hsu ◽

Y. K. Fang ◽

C. Y. Chen ◽

C. T. Lin ◽

...

Keyword(s):

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

10.7567/ssdm.2013.ps-3-4 ◽

2013 ◽

Author(s):

S.C. Tsai ◽

S.L. Wu ◽

J.F. Chen ◽

K.S. Tsai ◽

T.H. Kao ◽

...

Keyword(s):

Metal Gate ◽

Random Telegraph Noise ◽

Noise Parameters ◽

High K ◽

Telegraph Noise ◽

28 Nm

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Study on interfacial trap location induced subthreshold slope degradation extracted by random telegraph noise for high-k/metal gate FinFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113728 ◽

2020 ◽

Vol 111 ◽

pp. 113728

Author(s):

Yi-Lin Yang ◽

Wenqi Zhang ◽

Yu-Lin Chen ◽

Wen-Kuan Yeh

Keyword(s):

Subthreshold Slope ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Trap Location

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Nano-meter scaled gate area high-K dielectrics with trap-assisted tunneling and random telegraph noise

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931608 ◽

2014 ◽

Author(s):

Po-Jui Jerry Lin ◽

Zhe-An Andy Lee ◽

Chih-Wei Kira Yao ◽

Hsin-Jyun Vincent Lin ◽

Hiroshi Watanabe

Keyword(s):

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Trap Assisted Tunneling ◽

Assisted Tunneling

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Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/fnoise measurements

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec14 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC14 ◽

Cited By ~ 1

Author(s):

Tsung-Hsien Kao ◽

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Yean-Kuen Fang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Ion Implantation ◽

Metal Gate ◽

Random Telegraph Noise ◽

Aluminum Ion ◽

High K ◽

Telegraph Noise

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