An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] Interfaces

Mapping Intimacies ◽

10.1063/1.3667224 ◽

2011 ◽

Author(s):

Muhammad F. Sahdan ◽

Panji Achmari ◽

Fatimah A. Noor ◽

Ferry Iskandar ◽

Mikrajuddin Abdullah ◽

...

Keyword(s):

Tunneling Current ◽

Mos Capacitor ◽

Direct Tunneling ◽

High K ◽

Direct Tunneling Current

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Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Solid-State Electronics ◽

10.1016/j.sse.2004.05.016 ◽

2004 ◽

Vol 48 (10-11) ◽

pp. 1801-1807 ◽

Cited By ~ 26

Author(s):

Yijie Zhao ◽

Marvin H. White

Keyword(s):

Tunneling Current ◽

Gate Stacks ◽

Direct Tunneling ◽

High K ◽

Direct Tunneling Current

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Modeling of direct tunneling current through interfacial SiO/sub 2/ and high-K gate stacks

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272194 ◽

2004 ◽

Author(s):

Yijie Zhao ◽

M.H. White

Keyword(s):

Tunneling Current ◽

Gate Stacks ◽

Direct Tunneling ◽

High K ◽

Direct Tunneling Current

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Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

IEEE Electron Device Letters ◽

10.1109/led.2011.2106108 ◽

2011 ◽

Vol 32 (4) ◽

pp. 569-571 ◽

Cited By ~ 11

Author(s):

Heung-Jae Cho ◽

Younghwan Son ◽

Byoungchan Oh ◽

Seunghyun Jang ◽

Jong-Ho Lee ◽

...

Keyword(s):

Gate Dielectric ◽

Tunneling Current ◽

Random Telegraph Noise ◽

Direct Tunneling ◽

High K ◽

Telegraph Noise ◽

Direct Tunneling Current ◽

Gate Edge ◽

High K Gate Dielectric

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Study of direct tunneling current oscillations in ultrathin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1861153 ◽

2005 ◽

Vol 97 (6) ◽

pp. 064107 ◽

Cited By ~ 4

Author(s):

E. P. Nakhmedov ◽

C. Radehaus ◽

K. Wieczorek

Keyword(s):

Gate Dielectrics ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current

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Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications ◽

10.1016/s0038-1098(02)00719-6 ◽

2003 ◽

Vol 125 (3-4) ◽

pp. 219-223 ◽

Cited By ~ 14

Author(s):

Xiaoyan Liu ◽

Jinfeng Kang ◽

Ruqi Han

Keyword(s):

Current Model ◽

Tunneling Current ◽

Gate Oxide ◽

Quantization Effect ◽

Direct Tunneling ◽

Mos Devices ◽

Depletion Effect ◽

Direct Tunneling Current ◽

Thin Gate Oxide

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Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET

Microelectronics Journal ◽

10.1016/j.mejo.2011.02.008 ◽

2011 ◽

Vol 42 (5) ◽

pp. 688-692 ◽

Cited By ~ 3

Author(s):

S.K. Vishvakarma ◽

V. Komal Kumar ◽

A.K. Saxena ◽

S. Dasgupta

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Metal Gate ◽

Direct Tunneling ◽

Double Gate Mosfet ◽

Direct Tunneling Current

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Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

ECS Transactions ◽

10.1149/1.2728856 ◽

2019 ◽

Vol 6 (4) ◽

pp. 165-170 ◽

Cited By ~ 2

Author(s):

Georges Guegan ◽

Jeremy Pretet ◽

Romain Gwoziecki ◽

Olivier Gonnard ◽

Gilles Gouget ◽

...

Keyword(s):

Performance Enhancement ◽

Tunneling Current ◽

Device Performance ◽

Direct Tunneling ◽

Direct Tunneling Current

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Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

Journal of Computational Electronics ◽

10.1007/s10825-004-7092-3 ◽

2004 ◽

Vol 3 (3-4) ◽

pp. 439-442 ◽

Cited By ~ 1

Author(s):

M. Okamoto ◽

N. Mori

Keyword(s):

Numerical Simulation ◽

Tunneling Current ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current

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Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

Solid-State Electronics ◽

10.1016/j.sse.2005.11.005 ◽

2006 ◽

Vol 50 (2) ◽

pp. 170-176 ◽

Cited By ~ 1

Author(s):

H. Wong ◽

C.K. Wong ◽

Y. Fu ◽

J.J. Liou

Keyword(s):

Tunneling Current ◽

Charge Trapping ◽

Oxide Charge ◽

Direct Tunneling ◽

Direct Tunneling Current

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New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

Solid-State Electronics ◽

10.1016/j.sse.2009.02.011 ◽

2009 ◽

Vol 53 (7) ◽

pp. 741-745

Author(s):

Georges Guegan ◽

R. Gwoziecki ◽

P. Touret ◽

C. Raynaud ◽

J. Pretet ◽

...

Keyword(s):

Tunneling Current ◽

Floating Body ◽

Body Effect ◽

Direct Tunneling ◽

Floating Body Effect ◽

Direct Tunneling Current

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