Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2007.891757 ◽

2007 ◽

Vol 28 (4) ◽

pp. 258-260 ◽

Cited By ~ 50

Author(s):

X. P. Wang ◽

H. Y. Yu ◽

M.-F. Li ◽

C. X. Zhu ◽

S. Biesemans ◽

...

Keyword(s):

Gate Dielectrics ◽

Mos Devices

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Optimised Multi-Scan H-Beam Annealing Of Mos Devices

MRS Proceedings ◽

10.1557/proc-4-789 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 3

Author(s):

C J Pollard ◽

A E Glaccum ◽

J D Speight

Keyword(s):

Low Dose ◽

Gate Dielectrics ◽

Mos Devices ◽

Device Processing ◽

H Beam ◽

Mos Gate ◽

Mos Device

ABSTRACTThe optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.

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Enhanced Performance for Ge MOS Devices with High-k Gate Dielectrics through a Novel Post-gate CF4-plasma Treatment Process

ECS Meeting Abstracts ◽

10.1149/ma2008-02/37/2452 ◽

2008 ◽

Keyword(s):

Plasma Treatment ◽

Treatment Process ◽

Gate Dielectrics ◽

Mos Devices ◽

High K

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Al(ON) gate dielectrics for 4H-SiC MOS devices

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.125434 ◽

2020 ◽

Vol 532 ◽

pp. 125434

Author(s):

Jinghua Xia ◽

Shihai Wang ◽

Lixin Tian ◽

Wenting Zhang ◽

Hengyu Xu ◽

...

Keyword(s):

Gate Dielectrics ◽

Mos Devices

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Challenges of high-k gate dielectrics for future MOS devices

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929986 ◽

2002 ◽

Cited By ~ 5

Author(s):

J.S. Suehle ◽

E.M. Vogel ◽

M.D. Edelstein ◽

C.A. Richter ◽

N.V. Nguyen ◽

...

Keyword(s):

Gate Dielectrics ◽

Mos Devices ◽

High K

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A study on gate dielectrics for Ge MOS devices

10.5353/th_b4370387 ◽

2010 ◽

Author(s):

Chunxia Li

Keyword(s):

Gate Dielectrics ◽

Mos Devices

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SILC decay in Ge-based MOS devices with La2O3 gate dielectrics subjected to constant voltage stress

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331319 ◽

2009 ◽

Cited By ~ 1

Author(s):

E.K. Evangelou ◽

M.S. Rahman ◽

I.I. Androulidakis ◽

A. Dimoulas ◽

G. Mavrou ◽

...

Keyword(s):

Gate Dielectrics ◽

Constant Voltage ◽

Mos Devices ◽

Voltage Stress

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Improved radiation hardness of MOS devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing

Electronics Letters ◽

10.1049/el:19890546 ◽

1989 ◽

Vol 25 (13) ◽

pp. 812

Author(s):

G.Q. Lo ◽

D.K. Shih ◽

W.C. Ting ◽

D.L. Kwong

Keyword(s):

Thermal Processing ◽

Gate Dielectrics ◽

Rapid Thermal Processing ◽

Radiation Hardness ◽

Mos Devices

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Reoxidized nitrided oxides as gate dielectrics for high temperature integrated sensor MOS devices

10.1109/solsen.1988.26445 ◽

2003 ◽

Author(s):

W.-T. Shiau ◽

F.L. Terry

Keyword(s):

High Temperature ◽

Gate Dielectrics ◽

Integrated Sensor ◽

Mos Devices

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Determination of the Channel Doping Density in MOS Devices with High-K Gate Dielectrics

ECS Transactions ◽

10.1149/1.2209304 ◽

2019 ◽

Vol 1 (5) ◽

pp. 553-563

Author(s):

S. Kar ◽

Dharmendar Reddy

Keyword(s):

Gate Dielectrics ◽

Doping Density ◽

Mos Devices ◽

High K

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Plasma charging effect on MOS devices with gate dielectrics using high dielectric constant material

7th International Symposium on Plasma- and Process-Induced Damage ◽

10.1109/ppid.2002.1042606 ◽

2003 ◽

Author(s):

P.-J. Tzeng ◽

Yi-Yuan Chang ◽

Kuei-Shu Chang-Liao

Keyword(s):

Dielectric Constant ◽

High Dielectric Constant ◽

Gate Dielectrics ◽

Mos Devices ◽

High Dielectric ◽

Charging Effect

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