Plasma charging effect on MOS devices with gate dielectrics using high dielectric constant material

2003 ◽  
Author(s):  
P.-J. Tzeng ◽  
Yi-Yuan Chang ◽  
Kuei-Shu Chang-Liao
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Dielectrics ◽  
Mos Devices ◽  
High Dielectric ◽  
Charging Effect

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Performance and Reliability of thin Gate Dielectrics for VLSI: Materials and Processing Perspective

1986 ◽  
Vol 71 ◽  
Author(s):  
R. Singh
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectrics ◽  
Current Trends ◽  
High Dielectric ◽  
Rapid Isothermal Processing ◽  
Gate Dielectric Material

AbstractCurrent trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.

Enhanced performance of supercapacitors by constructing a “mini parallel-plate capacitor” in an electrode with high dielectric constant materials

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Carbon Fiber ◽  
Parallel Plate ◽  
Sandwich Structure ◽  
High Dielectric Constant ◽  
Parallel Plate Capacitor ◽  
Plate Capacitor ◽  
Fiber Metal ◽  
High Dielectric ◽  
Mini Plate

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.

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