Improved radiation hardness of MOS devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing

1989 ◽  
Vol 25 (13) ◽  
pp. 812
Author(s):  
G.Q. Lo ◽  
D.K. Shih ◽  
W.C. Ting ◽  
D.L. Kwong
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Radiation Hardness ◽  
Mos Devices

Rapid Thermal Processes for Future Nanometer MOS Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
John R. Hauser
Keyword(s):  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Dielectric Materials ◽  
Nanometer Scale ◽  
Thermal Processes ◽  
Contact Material ◽  
Mos Devices ◽  
Front End ◽  
Projected Changes

ABSTRACTScaling of MOS devices is projected to continue down to device dimensions of at least 50 nm. However, there are many potential roadblocks to achieving such dimensions and many standard materials and front-end processes which must be significantly changed to achieve these goals. The most important areas for change include (a) gate dielectric materials, (b) gate contact material, (c) source/drain contacting structure and (d) fundamental bulk CMOS structure. These projected changes are reviewed along with possible applications of rapid thermal processing to achieving future nanometer scale MOS devices.

MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

1990 ◽  
Vol 11 (11) ◽  
pp. 511-513 ◽  
Author(s):  
G.Q. Lo ◽  
W. Ting ◽  
D.-L. Kwong ◽  
J. Kuehne ◽  
C.W. Magee
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

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