2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01
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Challenges of high-k gate dielectrics for future MOS devices

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929986 ◽

2002 ◽

Cited By ~ 5

Author(s):

J.S. Suehle ◽

E.M. Vogel ◽

M.D. Edelstein ◽

C.A. Richter ◽

N.V. Nguyen ◽

...

Keyword(s):

Gate Dielectrics ◽

Mos Devices ◽

High K

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TRG-OES measurements of electron temperatures during fluorocarbon plasma etching of SiO/sub 2/ damage test wafers

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929979 ◽

2002 ◽

Author(s):

M.J. Schabel ◽

V.M. Donnelly ◽

K.P. Cheung ◽

A. Kornblit ◽

N. Layadi ◽

...

Keyword(s):

Plasma Etching ◽

Fluorocarbon Plasma

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Interconnect limits on gigascale integration (GSI)

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929964 ◽

2002 ◽

Author(s):

J.D. Meindl

Keyword(s):

Gigascale Integration

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The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFET

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929978 ◽

2002 ◽

Author(s):

L. Pantisano ◽

K.P. Cheung ◽

P. Smith ◽

C.Y. Chen ◽

D. Hwang ◽

...

Keyword(s):

Deep Submicron ◽

The Impact ◽

Rf Performances

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Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929973 ◽

2002 ◽

Cited By ~ 4

Author(s):

Meng-Fan Wang ◽

Ya-Chen Kao ◽

Tiao-Yuan Huang ◽

Horng-Chih Lin ◽

Chun-Yen Chang

Keyword(s):

Thermal Stability ◽

Cmos Transistors ◽

Thermal Stability Of

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Relation between plasma process-induced oxide failure fraction and antenna ratio

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929968 ◽

2002 ◽

Cited By ~ 1

Author(s):

Zhichun Wang ◽

A. Scarpa ◽

C. Salm ◽

F. Kuper

Keyword(s):

Plasma Process

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Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation process

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929972 ◽

2002 ◽

Cited By ~ 3

Author(s):

Y.H. Liou ◽

Y.S. Chen ◽

C.S. Wu ◽

C.S. Tsai ◽

M. Chi

Keyword(s):

Silicon Surface ◽

Oxide Etching

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Quality degradation for gate oxides grown on slightly damaged silicon surfaces

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929985 ◽

2002 ◽

Author(s):

S. Shuto ◽

J.P. McVittie

Keyword(s):

Silicon Surfaces ◽

Gate Oxides ◽

Quality Degradation

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New elements in Si technology-a contamination risk?

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929987 ◽

2002 ◽

Author(s):

W. Pamler

Keyword(s):

Contamination Risk

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Contamination issues in plasma etching of non-volatile materials: managing by-product deposition

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01 ◽

10.1109/ppid.2001.929988 ◽

2002 ◽

Author(s):

K.A. Olson ◽

L. Jerde ◽

J.P. Almerico

Keyword(s):

Plasma Etching ◽

Volatile Materials

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2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Challenges of high-k gate dielectrics for future MOS devices

TRG-OES measurements of electron temperatures during fluorocarbon plasma etching of SiO/sub 2/ damage test wafers

Interconnect limits on gigascale integration (GSI)

The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFET

Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors

Relation between plasma process-induced oxide failure fraction and antenna ratio

Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation process

Quality degradation for gate oxides grown on slightly damaged silicon surfaces

New elements in Si technology-a contamination risk?

Contamination issues in plasma etching of non-volatile materials: managing by-product deposition

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat No 01TH8538) PPID-01
Latest Publications