2009 Proceedings of the European Solid State Device Research Conference
Latest Publications

TOTAL DOCUMENTS

120

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Published By IEEE

9781424443512

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A simple and efficient concept for setting up multi-VT devices in thin BOx fully-depleted SOI technology

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331491 ◽

2009 ◽

Cited By ~ 5

Author(s):

J.-P. Noel ◽

O. Thomas ◽

C. Fenouillet-Beranger ◽

M.-A. Jaud ◽

P. Scheiblin ◽

...

Keyword(s):

Fully Depleted ◽

Soi Technology

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High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331620 ◽

2009 ◽

Cited By ~ 8

Author(s):

C. Urban ◽

M. Emam ◽

C. Sandow ◽

Q.-T. Zhao ◽

A. Fox ◽

...

Keyword(s):

High Frequency ◽

High Frequency Performance

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Low cost and high performance p-doped triple-gate access transistor for embedded DRAM memory cell

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331317 ◽

2009 ◽

Author(s):

F. Berthollet ◽

S. Cremer ◽

G. Bossu ◽

J.P. Carrere ◽

D. Jeanjean ◽

...

Keyword(s):

High Performance ◽

Low Cost ◽

Memory Cell

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A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331322 ◽

2009 ◽

Cited By ~ 1

Author(s):

Luca De Michielis ◽

Luca Selmi ◽

Adrian M. Ionescu

Keyword(s):

Cross Sections

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Essderc

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331379 ◽

2009 ◽

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LER-induced limitations to VDD scalability of FinFET-based SRAMs with different design options

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331584 ◽

2009 ◽

Cited By ~ 1

Author(s):

Emanue Baravelli ◽

Luca De Marchi ◽

Nicolo Speciale

Keyword(s):

Design Options

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A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331440 ◽

2009 ◽

Cited By ~ 3

Author(s):

Teruyoshi Hatanaka ◽

Mitsue Takahashi ◽

Shigeki Sakai ◽

Ken Takeuchi

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention

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The integration of EWOD and SAW technologies for improved droplet manipulation and mixing

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331396 ◽

2009 ◽

Cited By ~ 3

Author(s):

Y. Li ◽

B.W. Flynn ◽

W. Parkes ◽

Y. Liu ◽

Y. Feng ◽

...

Keyword(s):

Droplet Manipulation

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Function by defects at the atomic scale — New concepts for non-volatile memories

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331362 ◽

2009 ◽

Author(s):

Rainer Waser ◽

Matthias Wuttig

Keyword(s):

Atomic Scale ◽

New Concepts

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Statistical modeling of bit distributions in Phase Change Memories

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331486 ◽

2009 ◽

Cited By ~ 5

Author(s):

D. Ventrice ◽

A. Calderoni ◽

A. Spessot ◽

P. Fantini ◽

A. Sanasi ◽

...

Keyword(s):

Phase Change ◽

Statistical Modeling

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2009 Proceedings of the European Solid State Device Research ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A simple and efficient concept for setting up multi-VT devices in thin BOx fully-depleted SOI technology

High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

Low cost and high performance p-doped triple-gate access transistor for embedded DRAM memory cell

A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections

Essderc

LER-induced limitations to VDD scalability of FinFET-based SRAMs with different design options

A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

The integration of EWOD and SAW technologies for improved droplet manipulation and mixing

Function by defects at the atomic scale — New concepts for non-volatile memories

Statistical modeling of bit distributions in Phase Change Memories

2009 Proceedings of the European Solid State Device Research Conference
Latest Publications