Measurement and simulation of boron diffusivity in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

2002 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker
Keyword(s):  
Epitaxial Layers ◽  
Strained Si ◽  
Boron Diffusivity

Boron Diffusion in Si and Si1−xGex

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Kuo ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
J. E. Turner ◽  
D. Lefforge
Keyword(s):  
Process Simulation ◽  
Simulation Program ◽  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Strained Si ◽  
Boron Diffusivity ◽  
Concentration Levels

ABSTRACTBoron diffusion in in-situ doped Si and strained Si1−xGex (x < 0.20) epitaxial layers, subjected to inert-ambient furnace annealing, was investigated as a function of temperature (T = 750 °C - 850 °C). Boron diffusivity parameters were extracted from SUPREM IV, a process simulation program. We observed slower B diffusion in strained Si1−xGex relative to that in Si for B concentration levels ranging from 2×1017 to 3×1019 cm−3. Using relaxed graded Si1−xGex as “substrates”, we also characterized B diffusion in relaxed Si1−xGex (x < 0.60) at T = 800 °C. We propose a reaction of mobile B atoms pairing with Ge atoms to model the slower B diffusion in both fully strained and relaxed Si1−xGex.

Characterization of epitaxial layers by the depth dependence of boron diffusivity

1992 ◽  
Vol 61 (13) ◽  
pp. 1513-1515 ◽  
Author(s):  
K. J. van Oostrum ◽  
P. C. Zalm ◽  
W. B. de Boer ◽  
D. J. Gravesteijn ◽  
J. W. F. Maes
Keyword(s):  
Epitaxial Layers ◽  
Depth Dependence ◽  
Boron Diffusivity

scholarly journals Measurement and Simulation of Boron Diffusivity in Strained Si1 –xGex Epitaxial Layers

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 317-321 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker
Keyword(s):  
Annealing Temperature ◽  
Chemical Vapor ◽  
Empirical Expression ◽  
Strained Si ◽  
Chemical Effects ◽  
Pressure Chemical ◽  
Experimental Values ◽  
Boron Diffusivity ◽  
Rapid Pressure ◽  
Good Agreement

Diffusion of boron in compressively strained Si1 –xGex alloy layers grown by rapid pressure chemical vapor deposition has been studied as a function of the composition for 0.0006 ≤ x ≤ 0.15 and annealing temperature. The comparison of the Si1 –xGex samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Si1 –xGex layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrating that the diffusion of B was found to decrease with the Ge alloy content and annealing temperature. A simple empirical expression for the B retardation is presented and incorporated into a diffusion model for dopants in heterostructures. Good agreement between the measured and simulated diffusivity that includes the model for strain and chemical effects are obtained. By comparing with experimental values, our extracted (by using experiment and simulation) B diffusivity predicted a lower value (retardation).

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

2001 ◽  
Vol 48 (9) ◽  
pp. 2022-2031 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker ◽  
S. Decoutere ◽  
R. Loo ◽  
M. Caymax ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Strained Si

Investigation of Biaxial Strain in Strained Silicon on Insulator (SSOI) Using High-Resolution X-ray Diffraction

2007 ◽  
Vol 994 ◽  
Author(s):  
Yeongseok Zoo ◽  
N. D. Theodore ◽  
Terry L. Alford
Keyword(s):  
High Resolution ◽  
Stressed State ◽  
Twist Angle ◽  
Silicon On Insulator ◽  
Epitaxial Layers ◽  
Lattice Expansion ◽  
Biaxial Strain ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray

AbstractIntrinsic biaxial strain values of strained Si on insulator (SSOI) layers were measured using symmetric Bragg-Brentano configuration (i.e., {004} θ-2θ scans) and asymmetric {224} rocking curves. We confirmed that the twist angle between the layer and substrate can be incorporated into the biaxial strain equations for epitaxial layers. Moreover, as the samples were annealed up to 1200°C, the tensile parallel strains increased from 0.56% to 0.7%. Since both the overlying strained Si and underlying substrate maintained a stressed state in the buried SiO2, the compressively strained oxide retained the lattice expansion of the overlying strained Si and resulted in the increasing parallel strains after annealing.

Studies of boron diffusivity in strained Si1−xGex epitaxial layers

2001 ◽  
Vol 89 (2) ◽  
pp. 980-987 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker
Keyword(s):  
Epitaxial Layers ◽  
Boron Diffusivity

Improved process window using low-carbon Gexsil-x-yCyEpitaxial layers

1998 ◽  
Vol 535 ◽  
Author(s):  
A. Mocuta ◽  
D.W. Greve ◽  
R.M. Strong
Keyword(s):  
Strain Relaxation ◽  
Process Window ◽  
Epitaxial Layers ◽  
Low Carbon ◽  
Mos Capacitors ◽  
Beneficial Effects ◽  
Channel Thickness ◽  
Hole Confinement ◽  
Silicon Based ◽  
Boron Diffusivity

AbstractProcessing of silicon-based heterojunction devices is severely constrained by the relaxation of strained epitaxial layers. Generally the equilbrium critical thickness cannot be exceeded if high-temperature process steps such as oxidation and diffusion are performed. In this paper, we report on the beneficial effects of small amounts of carbon ( 0.2%) added to germanium-silicon epitaxial layers. We will show that such low concentrations result in a substantial decrease of boron diffusivity and strain relaxation. We will also report on the fabrication of GexSil-x-yCy heterostructure MOS capacitors with a channel thickness of 300 A° and a maximum germanium fraction of 50% A thermal oxidation at 800 ‘C was performed resulting in good C(VG) characteristics along with improved hole confinement.

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