Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers

2001 ◽  
Vol 48 (9) ◽  
pp. 2022-2031 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker ◽  
S. Decoutere ◽  
R. Loo ◽  
M. Caymax ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Strained Si

Boron Diffusion in Si and Si1−xGex

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Kuo ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
J. E. Turner ◽  
D. Lefforge
Keyword(s):  
Process Simulation ◽  
Simulation Program ◽  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Strained Si ◽  
Boron Diffusivity ◽  
Concentration Levels

ABSTRACTBoron diffusion in in-situ doped Si and strained Si1−xGex (x < 0.20) epitaxial layers, subjected to inert-ambient furnace annealing, was investigated as a function of temperature (T = 750 °C - 850 °C). Boron diffusivity parameters were extracted from SUPREM IV, a process simulation program. We observed slower B diffusion in strained Si1−xGex relative to that in Si for B concentration levels ranging from 2×1017 to 3×1019 cm−3. Using relaxed graded Si1−xGex as “substrates”, we also characterized B diffusion in relaxed Si1−xGex (x < 0.60) at T = 800 °C. We propose a reaction of mobile B atoms pairing with Ge atoms to model the slower B diffusion in both fully strained and relaxed Si1−xGex.

Boron diffusion in strained Si: A first-principles study

2004 ◽  
Vol 96 (10) ◽  
pp. 5543-5547 ◽  
Author(s):  
Li Lin ◽  
Taras Kirichenko ◽  
Sanjay K. Banerjee ◽  
Gyeong S. Hwang
Keyword(s):  
First Principles ◽  
Boron Diffusion ◽  
Strained Si ◽  
First Principles Study

Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe

2007 ◽  
Vol 7 (11) ◽  
pp. 4084-4088
Author(s):  
Young-Kyu Kim ◽  
Kwan-Sun Yoon ◽  
Joong-Sik Kim ◽  
Taeyoung Won
Keyword(s):  
Plane Strain ◽  
Mole Fraction ◽  
Kinetic Monte Carlo ◽  
Functional Dependence ◽  
Silicon Layer ◽  
Sige Layer ◽  
Boron Diffusion ◽  
Strained Si ◽  
Germanium Content ◽  
Charged Defects

We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

Investigation of Biaxial Strain in Strained Silicon on Insulator (SSOI) Using High-Resolution X-ray Diffraction

2007 ◽  
Vol 994 ◽  
Author(s):  
Yeongseok Zoo ◽  
N. D. Theodore ◽  
Terry L. Alford
Keyword(s):  
High Resolution ◽  
Stressed State ◽  
Twist Angle ◽  
Silicon On Insulator ◽  
Epitaxial Layers ◽  
Lattice Expansion ◽  
Biaxial Strain ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray

AbstractIntrinsic biaxial strain values of strained Si on insulator (SSOI) layers were measured using symmetric Bragg-Brentano configuration (i.e., {004} θ-2θ scans) and asymmetric {224} rocking curves. We confirmed that the twist angle between the layer and substrate can be incorporated into the biaxial strain equations for epitaxial layers. Moreover, as the samples were annealed up to 1200°C, the tensile parallel strains increased from 0.56% to 0.7%. Since both the overlying strained Si and underlying substrate maintained a stressed state in the buried SiO2, the compressively strained oxide retained the lattice expansion of the overlying strained Si and resulted in the increasing parallel strains after annealing.

Atomistic Simulation of Boron Diffusion with Charged Defects and Diffusivity in Strained Si/SiGe

2007 ◽  
Vol 7 (11) ◽  
pp. 4084-4088 ◽  
Author(s):  
Young-Kyu Kim ◽  
Kwan-Sun Yoon ◽  
Joong-Sik Kim ◽  
Taeyoung Won
Keyword(s):  
Plane Strain ◽  
Mole Fraction ◽  
Kinetic Monte Carlo ◽  
Functional Dependence ◽  
Silicon Layer ◽  
Sige Layer ◽  
Boron Diffusion ◽  
Strained Si ◽  
Germanium Content ◽  
Charged Defects

We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.

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