Nonlocal reduced boron diffusivity in silicon below strained Si[sub 1−x]Ge[sub x] surfaces

2008 ◽  
Vol 26 (1) ◽  
pp. 72 ◽  
Author(s):  
Malcolm S. Carroll ◽  
Y. S. Suh ◽  
R. Levy
Keyword(s):  
Strained Si ◽  
Boron Diffusivity

scholarly journals Measurement and Simulation of Boron Diffusivity in Strained Si1 –xGex Epitaxial Layers

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 317-321 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker
Keyword(s):  
Annealing Temperature ◽  
Chemical Vapor ◽  
Empirical Expression ◽  
Strained Si ◽  
Chemical Effects ◽  
Pressure Chemical ◽  
Experimental Values ◽  
Boron Diffusivity ◽  
Rapid Pressure ◽  
Good Agreement

Diffusion of boron in compressively strained Si1 –xGex alloy layers grown by rapid pressure chemical vapor deposition has been studied as a function of the composition for 0.0006 ≤ x ≤ 0.15 and annealing temperature. The comparison of the Si1 –xGex samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Si1 –xGex layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrating that the diffusion of B was found to decrease with the Ge alloy content and annealing temperature. A simple empirical expression for the B retardation is presented and incorporated into a diffusion model for dopants in heterostructures. Good agreement between the measured and simulated diffusivity that includes the model for strain and chemical effects are obtained. By comparing with experimental values, our extracted (by using experiment and simulation) B diffusivity predicted a lower value (retardation).

Boron Diffusion in Si and Si1−xGex

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Kuo ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
J. E. Turner ◽  
D. Lefforge
Keyword(s):  
Process Simulation ◽  
Simulation Program ◽  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Strained Si ◽  
Boron Diffusivity ◽  
Concentration Levels

ABSTRACTBoron diffusion in in-situ doped Si and strained Si1−xGex (x < 0.20) epitaxial layers, subjected to inert-ambient furnace annealing, was investigated as a function of temperature (T = 750 °C - 850 °C). Boron diffusivity parameters were extracted from SUPREM IV, a process simulation program. We observed slower B diffusion in strained Si1−xGex relative to that in Si for B concentration levels ranging from 2×1017 to 3×1019 cm−3. Using relaxed graded Si1−xGex as “substrates”, we also characterized B diffusion in relaxed Si1−xGex (x < 0.60) at T = 800 °C. We propose a reaction of mobile B atoms pairing with Ge atoms to model the slower B diffusion in both fully strained and relaxed Si1−xGex.

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si

Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 340-344 ◽  
Author(s):  
P. Dobrosz ◽  
S. J. Bull ◽  
S. H. Olsen ◽  
A. G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Strained Si

Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate

2008 ◽  
Vol 52 (12) ◽  
pp. 1845-1848 ◽  
Author(s):  
A. Ogura ◽  
T. Yoshida ◽  
D. Kosemura ◽  
Y. Kakemura ◽  
M. Takei ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Strained Si

Long range enhancement of boron diffusivity by phosphorus diffusion

1980 ◽  
Vol 48 (1-4) ◽  
pp. 101-104 ◽  
Author(s):  
D. Lecrosnier ◽  
G. Pelous ◽  
F. Richou
Keyword(s):  
Long Range ◽  
Phosphorus Diffusion ◽  
Boron Diffusivity
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