Studies of boron diffusivity in strained Si1−xGex epitaxial layers

2001 ◽  
Vol 89 (2) ◽  
pp. 980-987 ◽  
Author(s):  
K. Rajendran ◽  
W. Schoenmaker
Keyword(s):  
Epitaxial Layers ◽  
Boron Diffusivity

Characterization of epitaxial layers by the depth dependence of boron diffusivity

1992 ◽  
Vol 61 (13) ◽  
pp. 1513-1515 ◽  
Author(s):  
K. J. van Oostrum ◽  
P. C. Zalm ◽  
W. B. de Boer ◽  
D. J. Gravesteijn ◽  
J. W. F. Maes
Keyword(s):  
Epitaxial Layers ◽  
Depth Dependence ◽  
Boron Diffusivity

Boron Diffusion in Si and Si1−xGex

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Kuo ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
J. E. Turner ◽  
D. Lefforge
Keyword(s):  
Process Simulation ◽  
Simulation Program ◽  
Epitaxial Layers ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Strained Si ◽  
Boron Diffusivity ◽  
Concentration Levels

ABSTRACTBoron diffusion in in-situ doped Si and strained Si1−xGex (x < 0.20) epitaxial layers, subjected to inert-ambient furnace annealing, was investigated as a function of temperature (T = 750 °C - 850 °C). Boron diffusivity parameters were extracted from SUPREM IV, a process simulation program. We observed slower B diffusion in strained Si1−xGex relative to that in Si for B concentration levels ranging from 2×1017 to 3×1019 cm−3. Using relaxed graded Si1−xGex as “substrates”, we also characterized B diffusion in relaxed Si1−xGex (x < 0.60) at T = 800 °C. We propose a reaction of mobile B atoms pairing with Ge atoms to model the slower B diffusion in both fully strained and relaxed Si1−xGex.

Improved process window using low-carbon Gexsil-x-yCyEpitaxial layers

1998 ◽  
Vol 535 ◽  
Author(s):  
A. Mocuta ◽  
D.W. Greve ◽  
R.M. Strong
Keyword(s):  
Strain Relaxation ◽  
Process Window ◽  
Epitaxial Layers ◽  
Low Carbon ◽  
Mos Capacitors ◽  
Beneficial Effects ◽  
Channel Thickness ◽  
Hole Confinement ◽  
Silicon Based ◽  
Boron Diffusivity

AbstractProcessing of silicon-based heterojunction devices is severely constrained by the relaxation of strained epitaxial layers. Generally the equilbrium critical thickness cannot be exceeded if high-temperature process steps such as oxidation and diffusion are performed. In this paper, we report on the beneficial effects of small amounts of carbon ( 0.2%) added to germanium-silicon epitaxial layers. We will show that such low concentrations result in a substantial decrease of boron diffusivity and strain relaxation. We will also report on the fabrication of GexSil-x-yCy heterostructure MOS capacitors with a channel thickness of 300 A° and a maximum germanium fraction of 50% A thermal oxidation at 800 ‘C was performed resulting in good C(VG) characteristics along with improved hole confinement.

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

2021 ◽  
Vol 560-561 ◽  
pp. 126033
Author(s):  
J. Erlekampf ◽  
M. Rommel ◽  
K. Rosshirt-Lilla ◽  
B. Kallinger ◽  
P. Berwian ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Influence Of Substrate
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