Characterization of epitaxial layers by the depth dependence of boron diffusivity

1992 ◽  
Vol 61 (13) ◽  
pp. 1513-1515 ◽  
Author(s):  
K. J. van Oostrum ◽  
P. C. Zalm ◽  
W. B. de Boer ◽  
D. J. Gravesteijn ◽  
J. W. F. Maes
Keyword(s):  
Epitaxial Layers ◽  
Depth Dependence ◽  
Boron Diffusivity

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin ${\rm p}/{\rm p}^{+}$ Silicon Epitaxial Layers

2013 ◽  
Vol 60 (8) ◽  
pp. 2592-2597 ◽  
Author(s):  
Arash Elhami Khorasani ◽  
Terry Lynn Alford ◽  
Dieter K. Schroder
Keyword(s):  
Epitaxial Layers ◽  
Mos Capacitor

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

2005 ◽  
pp. 405-408
Author(s):  
R.J. Kumar ◽  
P.A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
I. Bhat ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Photoconductivity Decay

scholarly journals Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

2019 ◽  
Vol 34 (5) ◽  
pp. 848-853 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Piotr Caban ◽  
Jacek Baranowski
Keyword(s):  
Mass Spectrometry ◽  
Boron Nitride ◽  
Secondary Ion Mass Spectrometry ◽  
Van Der Waals ◽  
Depth Resolution ◽  
Atomic Resolution ◽  
Epitaxial Layers ◽  
Grain Formation ◽  
Secondary Ion

A refined SIMS procedure allows reaching atomic resolution and characterization of each layer in van der Waals structures separately.

Characterization of Strain-Engineered Si:C Epitaxial Layers on Si Substrates

2012 ◽  
Vol 45 (6) ◽  
pp. 23-29 ◽  
Author(s):  
W. S. Yoo ◽  
T. Ishigaki ◽  
T. Ueda ◽  
J. Kajiwara ◽  
K. Kang ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates

Characterization of ZnSe epitaxial layers by four-wave mixing experiments

1996 ◽  
Vol 11 (6) ◽  
pp. 952-958 ◽  
Author(s):  
A Chergui ◽  
J Valenta ◽  
J Moniatte ◽  
P Gilliot ◽  
J B Grun ◽  
...  
Keyword(s):  
Four Wave Mixing ◽  
Epitaxial Layers ◽  
Wave Mixing
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