Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224354 ◽

2015 ◽

Author(s):

N. Raghavan ◽

W. H. Liu ◽

R. Thamankar ◽

M. Bosman ◽

K. L. Pey

Keyword(s):

Noise Analysis ◽

Memory Devices ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text

Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices

IEEE Electron Device Letters ◽

10.1109/led.2010.2058088 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1038-1040 ◽

Cited By ~ 4

Author(s):

Meir Janai ◽

Ilan Bloom

Keyword(s):

Flash Memory ◽

Memory Devices ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text

Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904891 ◽

2016 ◽

Cited By ~ 5

Author(s):

Francesco Maria Puglisi

Keyword(s):

Noise Analysis ◽

Nanoscale Devices ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Electrical Reliability

Download Full-text

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

Download Full-text

Random Telegraph Noise modulation by switching bias in Floating Gate memory devices

10.1063/1.2759649 ◽

2007 ◽

Author(s):

Paolo Fantini ◽

Alessandro Calderoni ◽

Andrea Marinoni

Keyword(s):

Floating Gate ◽

Memory Devices ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Floating Gate Memory

Download Full-text

Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Chaos Solitons & Fractals ◽

10.1016/j.chaos.2021.111533 ◽

2021 ◽

Vol 153 ◽

pp. 111533

Author(s):

Nikolaos Vasileiadis ◽

Panagiotis Loukas ◽

Panagiotis Karakolis ◽

Vassilios Ioannou-Sougleridis ◽

Pascal Normand ◽

...

Keyword(s):

Noise Analysis ◽

Resistance Switching ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Multi Level ◽

Level Resistance

Download Full-text

Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

2014 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2014.6861157 ◽

2014 ◽

Cited By ~ 5

Author(s):

Y. T. Chung ◽

Y. H. Liu ◽

P. C. Su ◽

Y. H. Cheng ◽

Tahui Wang ◽

...

Keyword(s):

Hafnium Oxide ◽

Memory Devices ◽

Resistive Memory ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

Journal of Applied Physics ◽

10.1063/1.3691224 ◽

2012 ◽

Vol 111 (7) ◽

pp. 073701 ◽

Cited By ~ 30

Author(s):

Yuan Heng Tseng ◽

Wen Chao Shen ◽

Chrong Jung Lin

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Electron Conduction ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text

Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2175399 ◽

2012 ◽

Vol 59 (2) ◽

pp. 309-315 ◽

Cited By ~ 24

Author(s):

Andrea Ghetti ◽

Salvatore Maria Amoroso ◽

Aurelio Mauri ◽

Christian Monzio Compagnoni

Keyword(s):

Flash Memory ◽

Memory Devices ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text

Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

Download Full-text

Random telegraph noise analysis in time domain

Review of Scientific Instruments ◽

10.1063/1.1150519 ◽

2000 ◽

Vol 71 (4) ◽

pp. 1681-1688 ◽

Cited By ~ 61

Author(s):

Y. Yuzhelevski ◽

M. Yuzhelevski ◽

G. Jung

Keyword(s):

Time Domain ◽

Noise Analysis ◽

Random Telegraph Noise ◽

Telegraph Noise

Download Full-text