2016 IEEE International Integrated Reliability Workshop (IIRW)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781509041930

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Fast TDDB for early reliability monitoring

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904900 ◽

2016 ◽

Cited By ~ 1

Author(s):

C. LaRow ◽

Y. Liu ◽

Z. Chbili ◽

A. Gondal

Keyword(s):

Reliability Monitoring

Download Full-text

Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904910 ◽

2016 ◽

Cited By ~ 1

Author(s):

Kangil Kim ◽

Ilsub Chung ◽

Duan Sun ◽

Sangjae Rhe ◽

Ilgweon Kim ◽

...

Keyword(s):

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

[Front matter]

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904887 ◽

2016 ◽

Download Full-text

AC TDDB analysis for circuit-level gate oxide wearout reliability assessment

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904905 ◽

2016 ◽

Author(s):

T.E. Kopley ◽

K. O'Brien ◽

W.-C. Chang

Keyword(s):

Reliability Assessment ◽

Gate Oxide

Download Full-text

Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904891 ◽

2016 ◽

Cited By ~ 5

Author(s):

Francesco Maria Puglisi

Keyword(s):

Noise Analysis ◽

Nanoscale Devices ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Electrical Reliability

Download Full-text

Intrinsic reliability characterization for stand-alone MEMS switch technology

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904907 ◽

2016 ◽

Author(s):

Edoardo Maria Ceccarelli ◽

Colm Heffernan ◽

John Browne ◽

Padraig Fitzgerald

Keyword(s):

Mems Switch

Download Full-text

On the effect of interface traps on the carrier distribution function during hot-carrier degradation

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904911 ◽

2016 ◽

Cited By ~ 1

Author(s):

S.E. Tyaginov ◽

A. Makarov ◽

M. Jech ◽

J. Franco ◽

P. Sharma ◽

...

Keyword(s):

Distribution Function ◽

Interface Traps ◽

Carrier Distribution ◽

Hot Carrier ◽

Hot Carrier Degradation

Download Full-text

Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904913 ◽

2016 ◽

Author(s):

Y. M. Ding ◽

D. Misra ◽

P. Srinivasan

Keyword(s):

Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904894 ◽

2016 ◽

Cited By ~ 7

Author(s):

C. Ndiaye ◽

V. Huard ◽

R. Bertholon ◽

M. Rafik ◽

X. Federspiel ◽

...

Keyword(s):

Device Performance ◽

Dependent Effect

Download Full-text

BTI variability of SRAM cells under periodically changing stress profiles

2016 IEEE International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2016.7904888 ◽

2016 ◽

Author(s):

Kay-Uwe Giering ◽

Andre Lange ◽

Ben Kaczer ◽

Roland Jancke

Keyword(s):

Stress Profiles

Download Full-text

2016 IEEE International Integrated Reliability Workshop (IIRW)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Fast TDDB for early reliability monitoring

Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM

[Front matter]

AC TDDB analysis for circuit-level gate oxide wearout reliability assessment

Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices

Intrinsic reliability characterization for stand-alone MEMS switch technology

On the effect of interface traps on the carrier distribution function during hot-carrier degradation

Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs

Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes

BTI variability of SRAM cells under periodically changing stress profiles

2016 IEEE International Integrated Reliability Workshop (IIRW)
Latest Publications