2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
Latest Publications

TOTAL DOCUMENTS

148

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Published By IEEE

9781479999286

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FIB tilting method for thin TEM lamella preparation

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224349 ◽

2015 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung ◽

Chen Tung Hung

Keyword(s):

Tem Lamella

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InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224414 ◽

2015 ◽

Author(s):

Shin-Yuan Wang ◽

Chao-Hsin Chien ◽

Jin-Ju Lin ◽

Chun-Yen Chang

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ni Alloy

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The Origin of so-called ghost modulated reflectance mapping and its application in FA

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224462 ◽

2015 ◽

Author(s):

Zhongling Qian ◽

Christof Brillert ◽

Christian Burmer

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Feasibility study of TOF-SIMS surface measurement for Aluminum bond pad fluorine contamination

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224333 ◽

2015 ◽

Author(s):

Han Wei Teo ◽

Yanjing Yang ◽

Yun Wang ◽

Lei Zhu ◽

Zhi Qiang Mo ◽

...

Keyword(s):

Feasibility Study ◽

Surface Measurement ◽

Tof Sims

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Cu concentration from backside contamination induced STI crack after High Temperature Stress

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224428 ◽

2015 ◽

Author(s):

Jim Lee ◽

J. Huang Hsiang ◽

Zimmermann Gunnar ◽

Ambatiello Alexander ◽

X. Wang Xu ◽

...

Keyword(s):

High Temperature ◽

Temperature Stress ◽

High Temperature Stress

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Stability of InGaZnO thin-film transistors with Durimide passivation

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224409 ◽

2015 ◽

Author(s):

Bo-Shiuan Shie ◽

Chih-Bin Chang ◽

Hao-Chun Chang ◽

Horng-Chih Lin ◽

Tiao-Yuan Huang

Keyword(s):

Thin Film ◽

Thin Film Transistors

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On the origin of frequency dependence of single-trap induced degradation in AC NBTI

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224344 ◽

2015 ◽

Cited By ~ 1

Author(s):

Dongyuan Mao ◽

Shaofeng Guo ◽

Runsheng Wang ◽

Changze Liu ◽

Ru Huang

Keyword(s):

Frequency Dependence

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Improved fault localization method for power devices

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224370 ◽

2015 ◽

Author(s):

Huaping Lai ◽

Scott Liao ◽

Wei Xu

Keyword(s):

Fault Localization ◽

Power Devices ◽

Localization Method

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Leakage current study and relevant fault localization by IR-OBIRCH

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224394 ◽

2015 ◽

Author(s):

Chunlei Wu ◽

Berges Corinne

Keyword(s):

Leakage Current ◽

Fault Localization

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Micro analysis regarding package interconnection

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224348 ◽

2015 ◽

Author(s):

Hideki Hashimoto

Keyword(s):

Micro Analysis

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2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

FIB tilting method for thin TEM lamella preparation

InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

The Origin of so-called ghost modulated reflectance mapping and its application in FA

Feasibility study of TOF-SIMS surface measurement for Aluminum bond pad fluorine contamination

Cu concentration from backside contamination induced STI crack after High Temperature Stress

Stability of InGaZnO thin-film transistors with Durimide passivation

On the origin of frequency dependence of single-trap induced degradation in AC NBTI

Improved fault localization method for power devices

Leakage current study and relevant fault localization by IR-OBIRCH

Micro analysis regarding package interconnection

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
Latest Publications