Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices

2012 ◽  
Vol 59 (2) ◽  
pp. 309-315 ◽  
Author(s):  
Andrea Ghetti ◽  
Salvatore Maria Amoroso ◽  
Aurelio Mauri ◽  
Christian Monzio Compagnoni
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Random telegraph noise on the threshold voltage of multi-level flash memory

2017 ◽  
Vol 26 (1) ◽  
pp. 018502 ◽  
Author(s):  
Yiming Liao ◽  
Xiaoli Ji ◽  
Yue Xu ◽  
Chengxu Zhang ◽  
Qiang Guo ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Multi Level

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

2009 ◽  
Vol 30 (11) ◽  
pp. 1188-1190 ◽  
Author(s):  
H.C. Ma ◽  
Y.L. Chou ◽  
J.P. Chiu ◽  
Tahui Wang ◽  
S.H. Ku ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Charge Effect ◽  
Noise Amplitude ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Flash Memory Cell ◽  
Trapped Charge
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