Random Telegraph Noise modulation by switching bias in Floating Gate memory devices

2007 ◽  
Author(s):  
Paolo Fantini ◽  
Alessandro Calderoni ◽  
Andrea Marinoni
Keyword(s):  
Floating Gate ◽  
Memory Devices ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Floating Gate Memory

Semiconductor Nanocrystal Floating-gate Memory Devices

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand
Keyword(s):  
Low Voltage ◽  
Ion Beam ◽  
Low Energy ◽  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Research Directions ◽  
Semiconductor Nanocrystal ◽  
Floating Gate Memory ◽  
Attractive Option

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.

Fabrication of Arrayed Si Nanowire-Based Nano-Floating Gate Memory Devices on Flexible Plastics

2012 ◽  
Vol 12 (1) ◽  
pp. 578-584
Author(s):  
Changjoon Yoon ◽  
Youngin Jeon ◽  
Junggwon Yun ◽  
Sangsig Kim
Keyword(s):  
Floating Gate ◽  
Memory Devices ◽  
Si Nanowire ◽  
Floating Gate Memory

Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides

2009 ◽  
Vol 9 (3) ◽  
pp. 1904-1908 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Junggwon Yun ◽  
Yong-Seo Koo ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Floating Gate ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
Floating Gate Memory ◽  
Titanium Nanoparticles

Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics

2008 ◽  
Vol 8 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Eun-Kyu Kim ◽  
Dong-Uk Lee ◽  
Seon-Pil Kim ◽  
Tae-Hee Lee ◽  
Hyun-Mo Koo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Nanoparticles ◽  
Floating Gate ◽  
Oxide Nanoparticles ◽  
Memory Devices ◽  
Floating Gate Memory

Threshold Voltage Dependence of Random Telegraph Noise in 65 nm Floating Gate Multi-Level-Cell Memories

2019 ◽  
Vol 11 (1) ◽  
pp. 87-91
Author(s):  
Xiaojuan Zhao ◽  
Wenbing Fan ◽  
Yaping Wang ◽  
Haoliang Li ◽  
Xiaonan Yang
Keyword(s):  
Threshold Voltage ◽  
Voltage Dependence ◽  
Floating Gate ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Multi Level
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