Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Tsung-Hsien Kao; Shoou-Jinn Chang; Yean-Kuen Fang; Po-Chin Huang; Chien-Ming Lai; Chia-Wei Hsu; Yi-Wen Chen; Osbert Cheng; Chung-Yi Wu; San-Lein Wu

doi:10.1063/1.4893445

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

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Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.038005 ◽

2014 ◽

Vol 53 (3) ◽

pp. 038005

Author(s):

San-Lein Wu ◽

Hsu-Feng Chiu ◽

Yee-Shyi Chang ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC11 ◽

Cited By ~ 2

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

28 Nm

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Cited By ~ 9

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc11 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC11 ◽

Cited By ~ 1

Author(s):

Bo Chin Wang ◽

San Lein Wu ◽

Chien Wei Huang ◽

Yu Ying Lu ◽

Shoou Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type ◽

28 Nm

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Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine

Thin Solid Films ◽

10.1016/j.tsf.2012.02.087 ◽

2012 ◽

Vol 520 (13) ◽

pp. 4482-4485 ◽

Cited By ~ 1

Author(s):

Y.W. Chen ◽

C.M. Lai ◽

L.W. Cheng ◽

C.H. Hsu ◽

C.W. Hsu

Keyword(s):

Quality Improvement ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Interface Quality ◽

High K ◽

P Type

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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Journal of Applied Physics ◽

10.1063/1.3676255 ◽

2012 ◽

Vol 111 (2) ◽

pp. 024101 ◽

Cited By ~ 1

Author(s):

W. H. Liu ◽

K. L. Pey ◽

N. Raghavan ◽

X. Wu ◽

M. Bosman

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

Telegraph Noise

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Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc22 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC22

Author(s):

Hsu Feng Chiu ◽

San Lein Wu ◽

Yee Shyi Chang ◽

Shoou Jinn Chang ◽

Po Chin Huang ◽

...

Keyword(s):

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Noise Characterization

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Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab5b7c ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGA02 ◽

Cited By ~ 2

Author(s):

Sekhar Reddy Kola ◽

Yiming Li ◽

Narasimhulu Thoti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3058740 ◽

2009 ◽

Vol 27 (1) ◽

pp. 463 ◽

Cited By ~ 3

Author(s):

M. Aoulaiche ◽

B. Kaczer ◽

Ph. J. Roussel ◽

R. O’Connor ◽

M. Houssa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Bias Temperature Instability ◽

High K ◽

P Type

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