High Frequency Characteristics of Low Temperature Processing and High Density Integrated Capacitor on Organic Substrates

2006 ◽  
Author(s):  
B.K. Lok ◽  
A.C.W. Lu ◽  
W. Fan ◽  
C.K. Tan ◽  
G.K.L. Goh ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Frequency ◽  
Frequency Characteristics ◽  
High Density ◽  
Organic Substrates ◽  
Low Temperature Processing

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

1993 ◽  
Vol 40 (2) ◽  
pp. 378-384 ◽  
Author(s):  
M. Miyamoto ◽  
K. Yano ◽  
Y. Tamaki ◽  
M. Aoki ◽  
T. Nishida ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Frequency Characteristics

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

2009 ◽  
Vol 24 (5) ◽  
pp. 052001 ◽  
Author(s):  
W Lerch ◽  
A Gschwandtner ◽  
S Schneider ◽  
T Theiler ◽  
Z Nenyei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
Semiconductor Surfaces ◽  
Low Temperature Processing

High Density Plasma Processing of Microcrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
P. C. Joshi ◽  
A. T. Voutsas ◽  
J. W. Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
High Density ◽  
High Quality ◽  
Low Temperature Processing ◽  
Interfacial Characteristics ◽  
Ratio Range ◽  
Density Plasma

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

Low‐temperature, uniform, and high‐density plasma produced by a new ultra‐high‐frequency discharge with a spokewise antenna

1995 ◽  
Vol 67 (10) ◽  
pp. 1414-1416 ◽  
Author(s):  
Seiji Samukawa ◽  
Yukito Nakagawa ◽  
Tsutomu Tsukada ◽  
Hiroyuki Ueyama ◽  
Kibatsu Shinohara
Keyword(s):  
Low Temperature ◽  
High Frequency ◽  
High Density ◽  
Ultra High Frequency ◽  
High Frequency Discharge ◽  
Density Plasma
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