Characterization of low temperature processing and high density integrated capacitor on organic substrate

2006 ◽  
Author(s):  
W. Fan ◽  
B. Lok ◽  
Albert Lu ◽  
L. Wai
Keyword(s):  
Low Temperature ◽  
Organic Substrate ◽  
High Density ◽  
Low Temperature Processing

Low-temperature processing and characterization of single-phase PZT powders by sol-gel method

2007 ◽  
Vol 42 (23) ◽  
pp. 9801-9806 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Noureddine Bel Hadj Tahar ◽  
Abdelhamid Ben Salah
Keyword(s):  
Low Temperature ◽  
Single Phase ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Low Temperature Processing

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

2009 ◽  
Vol 24 (5) ◽  
pp. 052001 ◽  
Author(s):  
W Lerch ◽  
A Gschwandtner ◽  
S Schneider ◽  
T Theiler ◽  
Z Nenyei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
Semiconductor Surfaces ◽  
Low Temperature Processing

High Density Plasma Processing of Microcrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
P. C. Joshi ◽  
A. T. Voutsas ◽  
J. W. Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
High Density ◽  
High Quality ◽  
Low Temperature Processing ◽  
Interfacial Characteristics ◽  
Ratio Range ◽  
Density Plasma

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

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