High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

1985 ◽  
Vol 6 (12) ◽  
pp. 628-630 ◽  
Author(s):  
A. Ketterson ◽  
M. Moloney ◽  
W.T. Masselink ◽  
C.K. Peng ◽  
J. Klem ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Transconductance

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanotubes ◽  
High Transconductance ◽  
Passivated Silicon ◽  
Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

2002 ◽  
Vol 743 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Takehiko Tawara ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
High Transconductance

ABSTRACTElectron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

1988 ◽  
Vol 9 (7) ◽  
pp. 355-357 ◽  
Author(s):  
R.R. Daniels ◽  
P.P. Ruden ◽  
M. Shur ◽  
D. Grider ◽  
T.E. Nohava ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Transconductance ◽  
Very High

High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

1996 ◽  
Vol 69 (6) ◽  
pp. 794-796 ◽  
Author(s):  
Q. Chen ◽  
M. Asif  Khan ◽  
J. W. Yang ◽  
C. J. Sun ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
High Transconductance

High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

1992 ◽  
Vol 13 (3) ◽  
pp. 164-166 ◽  
Author(s):  
J.D. Werking ◽  
C.R. Bolognesi ◽  
L.-D. Chang ◽  
C. Nguyen ◽  
E.L. Hu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors ◽  
High Transconductance
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