Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors
2017 ◽
Vol 5
(6)
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pp. 1409-1413
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Keyword(s):
Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.
Keyword(s):
2013 ◽
Vol 15
(3)
◽
pp. 832-836
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2007 ◽
Vol 111
(30)
◽
pp. 11480-11483
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1985 ◽
Vol 6
(12)
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pp. 628-630
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2008 ◽
Vol 113
(4)
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pp. 1567-1574
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