Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

Nanoscale ◽  
2014 ◽  
Vol 6 (14) ◽  
pp. 7847-7852 ◽  
Author(s):  
Soonshin Kwon ◽  
Zack C. Y. Chen ◽  
Hyunwoo Noh ◽  
Ju Hun Lee ◽  
Hang Liu ◽  
...  

Crystalline silicon nanotubes exhibit high electrical mobility, while demonstrating loading of biomolecules inside for the first time.


2007 ◽  
Vol 111 (30) ◽  
pp. 11480-11483 ◽  
Author(s):  
Moon-Ho Ham ◽  
Dong-Keun Oh ◽  
Jae-Min Myoung

1985 ◽  
Vol 6 (12) ◽  
pp. 628-630 ◽  
Author(s):  
A. Ketterson ◽  
M. Moloney ◽  
W.T. Masselink ◽  
C.K. Peng ◽  
J. Klem ◽  
...  

2008 ◽  
Vol 113 (4) ◽  
pp. 1567-1574 ◽  
Author(s):  
Christine Videlot-Ackermann ◽  
Hugues Brisset ◽  
Jian Zhang ◽  
Jorg Ackermann ◽  
Sébastien Nénon ◽  
...  

2012 ◽  
Vol 7 (1) ◽  
pp. 159 ◽  
Author(s):  
Leonardo Viti ◽  
Miriam S Vitiello ◽  
Daniele Ercolani ◽  
Lucia Sorba ◽  
Alessandro Tredicucci

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