High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

A. Antreasyan; P. A. Garbinski; V. D. Mattera; H. Temkin

doi:10.1063/1.97105

High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

Download Full-text

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Download Full-text

High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.2070 ◽

1988 ◽

Vol 9 (3) ◽

pp. 145-147 ◽

Cited By ~ 15

Author(s):

E.F. Schubert ◽

W.T. Tsang ◽

M.D. Fueur ◽

P.M. Mankiewich

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Beam Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Transconductance

Download Full-text

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.111472 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2706-2708 ◽

Cited By ~ 26

Author(s):

J. Reed ◽

Z. Fan ◽

G. B. Gao ◽

A. Botchkarev ◽

H. Morkoç

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Transconductance

Download Full-text

High transconductance InP metal-insulator-semiconductor field effect transistors for monolithic optoelectronic integration

Optical Fiber Communication ◽

10.1364/ofc.1987.tuq30 ◽

1987 ◽

Author(s):

A. ANTREASYAN ◽

P. A. GARBINSKI ◽

V. D. MATTERA ◽

N. J. SHAH ◽

H. TEMKIN

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Optoelectronic Integration ◽

High Transconductance

Download Full-text

Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99423 ◽

1988 ◽

Vol 52 (6) ◽

pp. 495-497 ◽

Cited By ~ 5

Author(s):

J. G. Johnson ◽

S. R. Forrest ◽

C. R. Zeisse ◽

R. Nguyen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Voltage Drift

Download Full-text

Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

Thin Solid Films ◽

10.1016/0040-6090(83)90429-7 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 107-117 ◽

Cited By ~ 7

Author(s):

T Sawada ◽

H Hasegawa ◽

H Ohno

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Optical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

Download Full-text

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Anomalous inversion channel formation in enhancement‐mode InP metal‐insulator‐semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.330003 ◽

1982 ◽

Vol 53 (10) ◽

pp. 7033-7038 ◽

Cited By ~ 5

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Formation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Inversion Channel

Download Full-text

High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000576 ◽

2021 ◽

pp. 2000576

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Vishank Talesara ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

...

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Density Enhancement

Download Full-text

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Applied Physics Express ◽

10.1143/apex.4.024103 ◽

2011 ◽

Vol 4 (2) ◽

pp. 024103 ◽

Cited By ~ 10

Author(s):

Uttam Singisetti ◽

Man Hoi Wong ◽

Sansaptak Dasgupta ◽

James S. Speck ◽

Umesh K. Mishra

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Current Gain ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

Download Full-text