High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

1992 ◽  
Vol 13 (3) ◽  
pp. 164-166 ◽  
Author(s):  
J.D. Werking ◽  
C.R. Bolognesi ◽  
L.-D. Chang ◽  
C. Nguyen ◽  
E.L. Hu ◽  
...  
2013 ◽  
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pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.


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