Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

R.R. Daniels; P.P. Ruden; M. Shur; D. Grider; T.E. Nohava; D.K. Arch

doi:10.1109/55.742

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

IEEE Electron Device Letters ◽

10.1109/55.742 ◽

1988 ◽

Vol 9 (7) ◽

pp. 355-357 ◽

Cited By ~ 31

Author(s):

R.R. Daniels ◽

P.P. Ruden ◽

M. Shur ◽

D. Grider ◽

T.E. Nohava ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

High Transconductance ◽

Very High

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High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

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GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current

Applied Physics Letters ◽

10.1063/1.99246 ◽

1988 ◽

Vol 52 (12) ◽

pp. 975-977 ◽

Cited By ~ 49

Author(s):

T. E. Zipperian ◽

L. R. Dawson ◽

T. J. Drummond ◽

J. E. Schirber ◽

I. J. Fritz

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

High Peak ◽

Well Field ◽

Strained Quantum Well ◽

High Transconductance

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Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

Journal of Materials Chemistry C ◽

10.1039/c6tc04429h ◽

2017 ◽

Vol 5 (6) ◽

pp. 1409-1413 ◽

Cited By ~ 5

Author(s):

E. Montes ◽

U. Schwingenschlögl

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanotubes ◽

High Transconductance ◽

Passivated Silicon ◽

Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

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Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors

Electronics Letters ◽

10.1049/el.2016.0328 ◽

2016 ◽

Vol 52 (10) ◽

pp. 842-844 ◽

Cited By ~ 8

Author(s):

Wenjun Li ◽

Patrick Fay ◽

Tao Yu ◽

Judy Hoyt

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Detection Performance ◽

Microwave Detection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Well Field ◽

Semiconductor Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.2070 ◽

1988 ◽

Vol 9 (3) ◽

pp. 145-147 ◽

Cited By ~ 15

Author(s):

E.F. Schubert ◽

W.T. Tsang ◽

M.D. Fueur ◽

P.M. Mankiewich

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Beam Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Transconductance

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Cited By ~ 48

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Short Channel ◽

High K ◽

Well Field ◽

Low Power Logic

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