GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

J. Reed; Z. Fan; G. B. Gao; A. Botchkarev; H. Morkoç

doi:10.1063/1.111472

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.111472 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2706-2708 ◽

Cited By ~ 26

Author(s):

J. Reed ◽

Z. Fan ◽

G. B. Gao ◽

A. Botchkarev ◽

H. Morkoç

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Transconductance

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High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.2070 ◽

1988 ◽

Vol 9 (3) ◽

pp. 145-147 ◽

Cited By ~ 15

Author(s):

E.F. Schubert ◽

W.T. Tsang ◽

M.D. Fueur ◽

P.M. Mankiewich

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Beam Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Transconductance

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High transconductance InP metal-insulator-semiconductor field effect transistors for monolithic optoelectronic integration

Optical Fiber Communication ◽

10.1364/ofc.1987.tuq30 ◽

1987 ◽

Author(s):

A. ANTREASYAN ◽

P. A. GARBINSKI ◽

V. D. MATTERA ◽

N. J. SHAH ◽

H. TEMKIN

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Optoelectronic Integration ◽

High Transconductance

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High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

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RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2611 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2611-2614 ◽

Cited By ~ 18

Author(s):

Hitoshi Umezawa ◽

Takuya Arima ◽

Naoki Fujihara ◽

Hirotada Taniuchi ◽

Hiroaki Ishizaka ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Polycrystalline Diamond ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Channel Mobility ◽

Rf Performance ◽

High Transconductance

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Cited By ~ 3

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Journal of Computational Electronics ◽

10.1007/s10825-019-01320-8 ◽

2019 ◽

Vol 18 (2) ◽

pp. 527-533

Author(s):

Jing Sun ◽

Yanping Li ◽

Lei Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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