Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

M. Farahmand; K.F. Brennan

doi:10.1109/16.772471

Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

IEEE Transactions on Electron Devices ◽

10.1109/16.772471 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1319-1325 ◽

Cited By ~ 28

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Rates

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Impact ionization model for full band Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.356112 ◽

1994 ◽

Vol 75 (7) ◽

pp. 3500-3506 ◽

Cited By ~ 78

Author(s):

Y. Kamakura ◽

H. Mizuno ◽

M. Yamaji ◽

M. Morifuji ◽

K. Taniguchi ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Model

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Impact ionization model for full band Monte Carlo simulation in GaAs

Journal of Applied Physics ◽

10.1063/1.361176 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2473-2480 ◽

Cited By ~ 70

Author(s):

H. K. Jung ◽

K. Taniguchi ◽

C. Hamaguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Model

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Model of hole-initiated impact-ionization rate in α-quartz for a full band Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.1586973 ◽

2003 ◽

Vol 94 (2) ◽

pp. 1096-1104 ◽

Cited By ~ 1

Author(s):

Tatsuya Kunikiyo ◽

Kiyoshi Ishikawa ◽

Yasuo Inoue ◽

Yoshinari Kamakura ◽

Kenji Taniguchi ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Ionization Rate ◽

Full Band ◽

Impact Ionization Rate

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A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.362375 ◽

1996 ◽

Vol 79 (10) ◽

pp. 7718-7725 ◽

Cited By ~ 41

Author(s):

Tatsuya Kunikiyo ◽

Masahiro Takenaka ◽

Masato Morifuji ◽

Kenji Taniguchi ◽

Chihiro Hamaguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band

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Monte Carlo simulation of impact ionization rates in InAlAs-InGaAs square and graded barrier superlattice

IEEE Journal of Quantum Electronics ◽

10.1109/3.466058 ◽

1995 ◽

Vol 31 (10) ◽

pp. 1826-1834 ◽

Cited By ~ 22

Author(s):

I. Watanabe ◽

T. Torikai ◽

K. Taguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Ionization Rates

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Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605145 ◽

2016 ◽

Author(s):

Y. Kamakura ◽

R. Fujita ◽

K. Konaga ◽

Y. Ueoka ◽

N. Mori ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Ab Initio ◽

Ab Initio Calculation ◽

Impact Ionization ◽

Wide Bandgap ◽

Wide Bandgap Semiconductors ◽

Full Band ◽

Bandgap Semiconductors

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Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865265 ◽

2005 ◽

Cited By ~ 6

Author(s):

M.V. Fischetti ◽

N. Sano ◽

S.E. Laux ◽

K. Natori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Energy Transport ◽

Impact Ionization ◽

High Energy ◽

Full Band

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A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model

Journal of Applied Physics ◽

10.1063/1.355849 ◽

1994 ◽

Vol 75 (1) ◽

pp. 297-312 ◽

Cited By ~ 120

Author(s):

T. Kunikiyo ◽

M. Takenaka ◽

Y. Kamakura ◽

M. Yamaji ◽

H. Mizuno ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Band Structure ◽

Impact Ionization ◽

Full Band ◽

Ionization Model ◽

Full Band Structure

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Monte Carlo Simulation of Temperature- and Field-dependent Impact Ionization for GaAs

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_70 ◽

2001 ◽

pp. 162-163

Author(s):

H. K. Jung ◽

S. W. Ko ◽

C. K. You ◽

K. Taniguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Field Dependent

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Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Journal of Applied Physics ◽

10.1063/1.5144214 ◽

2020 ◽

Vol 127 (15) ◽

pp. 155702 ◽

Cited By ~ 2

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Real Space ◽

Coulomb Interactions ◽

Full Band ◽

Transport Analysis

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