A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

1996 ◽  
Vol 79 (10) ◽  
pp. 7718-7725 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Masahiro Takenaka ◽  
Masato Morifuji ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band

Impact ionization model for full band Monte Carlo simulation

1994 ◽  
Vol 75 (7) ◽  
pp. 3500-3506 ◽  
Author(s):  
Y. Kamakura ◽  
H. Mizuno ◽  
M. Yamaji ◽  
M. Morifuji ◽  
K. Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Impact ionization model for full band Monte Carlo simulation in GaAs

1996 ◽  
Vol 79 (5) ◽  
pp. 2473-2480 ◽  
Author(s):  
H. K. Jung ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Model of hole-initiated impact-ionization rate in α-quartz for a full band Monte Carlo simulation

2003 ◽  
Vol 94 (2) ◽  
pp. 1096-1104 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Kiyoshi Ishikawa ◽  
Yasuo Inoue ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Full Band ◽  
Impact Ionization Rate
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