2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605190 ◽

2016 ◽

Cited By ~ 2

Author(s):

Vito Simonka ◽

Andreas Hossinger ◽

Josef Weinbub ◽

Siegfried Selberherr

Keyword(s):

Growth Rate ◽

Silicon Carbide ◽

Modeling And Simulation ◽

Thermal Oxidation ◽

Three Dimensional ◽

Dimensional Growth

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Automated vertical design co-optimization of a 1200V IGBT and diode

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605178 ◽

2016 ◽

Cited By ~ 3

Author(s):

M. Bina ◽

A. Philippou ◽

M. Hauf ◽

Ch. Sandow ◽

F.-J. Niedernostheide

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Advanced physical modeling of SiOx resistive random access memories

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605169 ◽

2016 ◽

Cited By ~ 4

Author(s):

Toufik Sadi ◽

Liping Wang ◽

David Gao ◽

Adnan Mehonic ◽

Luca Montesi ◽

...

Keyword(s):

Physical Modeling ◽

Random Access

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Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605198 ◽

2016 ◽

Author(s):

Paul Manstetten ◽

Lado Filipovic ◽

Andreas Hossinger ◽

Josef Weinbub ◽

Siegfried Selberherr

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

One Dimensional

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Compact modeling of power devices embedded in advanced low-power CMOS circuits

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605184 ◽

2016 ◽

Cited By ~ 1

Author(s):

Y. Hirano ◽

H. Kikuchihara ◽

T. Iizuka ◽

M. Miura-Mattausch ◽

H. J. Mattausch ◽

...

Keyword(s):

Low Power ◽

Compact Modeling ◽

Cmos Circuits ◽

Power Devices ◽

Low Power Cmos

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Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605152 ◽

2016 ◽

Author(s):

Saurabh Sant ◽

Hamilton Carrillo-Nunez ◽

Mathieu Luisier ◽

Andreas Schenk

Keyword(s):

Transfer Matrix ◽

Quantum Confinement ◽

Semiclassical Model ◽

Tunnel Fets

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Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605180 ◽

2016 ◽

Author(s):

Shaoyan Di ◽

Zhiyuan Lun ◽

Pengying Chang ◽

Lei Shen ◽

Kai Zhao ◽

...

Keyword(s):

Double Gate ◽

Scattering Mechanism ◽

Nano Scale

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A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605154 ◽

2016 ◽

Author(s):

Alex Burenkov ◽

Juergen Lorenz

Keyword(s):

Silicon Nanowire ◽

Electrical Performance ◽

Tunnel Fets ◽

Source Contact

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Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605218 ◽

2016 ◽

Cited By ~ 1

Author(s):

Naoto Ito ◽

Taichi Misawa ◽

Yuji Awano

Keyword(s):

Monte Carlo ◽

Thermal Properties ◽

Gallium Nitride ◽

Monte Carlo Simulations ◽

Nanometer Scale ◽

Number Distribution ◽

Self Consistent ◽

Phonon Number

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Physics-based hot-carrier degradation model for SiGe HBTs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2016.7605216 ◽

2016 ◽

Cited By ~ 2

Author(s):

Hamed Kamrani ◽

Dominic Jabs ◽

Vincenzo d'Alessandro ◽

Niccolo Rinaldi ◽

Christoph Jungemann

Keyword(s):

Degradation Model ◽

Hot Carrier ◽

Hot Carrier Degradation

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2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

Automated vertical design co-optimization of a 1200V IGBT and diode

Advanced physical modeling of SiOx resistive random access memories

Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures

Compact modeling of power devices embedded in advanced low-power CMOS circuits

Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs

Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Physics-based hot-carrier degradation model for SiGe HBTs

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2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

Automated vertical design co-optimization of a 1200V IGBT and diode

Advanced physical modeling of SiOx resistive random access memories

Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures

Compact modeling of power devices embedded in advanced low-power CMOS circuits

Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs

Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact

Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Physics-based hot-carrier degradation model for SiGe HBTs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications